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參數資料
| 型號： | AQZ102D |
| 英文描述： | POWER PhotoMOS RELAYS (Voltage Sensitive Type) |
| 中文描述： | 功率PhotoMOS繼電器（電壓敏感型） |
| 文件頁數： | 3/5頁 |
| 文件大?。?/td> | 89K |
| 代理商： | AQZ102D |
AQZ10
H
D, 20
H
D
2) Electrical characteristics (Ambient temperature: 25
°
C
77
°
F
)
Item
216
Recommendable LED forward current I
F
= 5 to 10 mA. For type of connection, see page 35.
*Turn on/off time
I
For Dimensions, see Page 29.
I
For Schematic and Wiring Diagrams, see Page 35.
I
For Cautions for Use, see Page 40.
Symbol
AQZ102D
AQZ105D
AQZ107D
1.4 V
4 V
0.8 V
1.3 V
6.5 mA
0.090
AQZ104D
Remarks
Input
Operate voltage
Typical
Maximum
Minimum
Typical
Typical
V
Fon
I
L
= 100 mA
V
L
= 10 V
Turn off voltage
V
Foff
I
L
= 100 mA
V
L
= 10 V
Input current
I
IN
V
IN
= 5 V
V
IN
= 5 V
I
L
= Max.
Within 1 s on time
V
IN
= 0
V
L
= Max.
V
IN
= 5 V
I
L
= 100 mA
V
L
= 10 V
V
IN
= 5 V
I
L
= 100 mA
V
L
= 10 V
Output
On resistance
Typical
R
on
0.033
0.33
1.23
Maximum
0.09
0.17
0.55
1.6
Off state leakage current
Maximum
I
leak
10
μ
A
Transfer
characteristics
Switching
speed
Turn on time*
Typical
T
on
3.3 ms
2.2 ms
1.5 ms
1.2 ms
Maximum
10.0 ms
Turn off time*
Typical
T
off
0.2 ms
0.2 ms
0.1 ms
0.1 ms
Maximum
3.0 ms
I/O capacitance
Typical
Maximum
C
iso
0.8 pF
1.5 pF
f = 1 MHz
V
B
= 0
Initial I/O isolation
resistance
Minimum
R
iso
1,000 M
500 V DC
Maximum operating
speed
Maximum
—
0.5 cps
V
IN
= 5 V
Duty factor = 50%
I
L
×
V
L
= 200 (VA)
2 hours for 3 axes
3 times for 3 axes
Vibration resistance
Shock resistance
Minimum
Minimum
—
—
10 to 55 Hz at double amplitude of 3 mm
4,900 m/s
2
{500 G}1 ms
Ton
Input
Output
10%
90%
Toff
REFERENCE DATA
1. Load current vs. ambient temperature char-
acteristics
Allowable ambient temperature: –40
°
C to +85
°
C
–40
°
F to +185
°
F;
V
IN
: Input voltage; I
L
(derate):Load current (derate); I
L
:
Absolute maximum ratings of continuous load current
2.-(1) Load current vs. ambient temperature
characteristics in adjacent mounting
Input voltage: 4V
q
V
IN
q
6V;
I
L
(derate): Load current (derate); I
L
: Absolute maxi-
mum ratings of continuous load current; : Adjacent
mounting pitch
2.-(2) Load current vs. ambient temperature
characteristics in adjacent mounting
Input voltage: 6V < V
IN
q
15V;
I
L
(derate): Load current (derate); I
L
: Absolute maxi-
mum ratings of continuous load current; : Adjacent
mounting pitch
0
–40
100
120
0
Ambient temperature,
°
C
20
40
60
–20
80
100
80
85
60
40
20
4V V
IN
6V
6V<V
IN
15V
15V<V
IN
30V
I
L
×
I
L
0
–40
40
60
80
100
0
20
40
60
–20
80
100
20
=20mm
=10mm
= 5mm
85
Ambient temperature,
°
C
I
L
×
I
L
0
–40
40
60
80
100
0
–20
80
100
20
=20mm
=10mm
= 5mm
75
Ambient temperature,
°
C
I
L
×
I
L
相關PDF資料 |
PDF描述 |
|---|---|
| AQZ104D | POWER PhotoMOS RELAYS (Voltage Sensitive Type) |
| AQZ105D | POWER PhotoMOS RELAYS (Voltage Sensitive Type) |
| AQZ107D | POWER PhotoMOS RELAYS (Voltage Sensitive Type) |
| AQZ202D | POWER PhotoMOS RELAYS (Voltage Sensitive Type) |
| AQZ204D | POWER PhotoMOS RELAYS (Voltage Sensitive Type) |
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| AQZ104 | 功能描述:固態(tài)繼電器-PCB安裝 400v .7A SIL Form A Norm-Open RoHS:否 制造商:Omron Electronics 控制電壓范圍: 負載電壓額定值:40 V 負載電流額定值:120 mA 觸點形式:1 Form A (SPST-NO) 輸出設備:MOSFET 封裝 / 箱體:USOP-4 安裝風格:SMD/SMT |
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| AQZ104D | 功能描述:固態(tài)繼電器-PCB安裝 400v .7A SIL Form A Norm-Open RoHS:否 制造商:Omron Electronics 控制電壓范圍: 負載電壓額定值:40 V 負載電流額定值:120 mA 觸點形式:1 Form A (SPST-NO) 輸出設備:MOSFET 封裝 / 箱體:USOP-4 安裝風格:SMD/SMT |
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