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參數(shù)資料
| 型號(hào)： | AQ1L2Q |
| 廠商： | NEC Corp. |
| 英文描述： | on-chip resistor NPN silicon epitaxial transistor |
| 中文描述： | 片上NPN硅外延電阻晶體管 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 104K |
| 代理商： | AQ1L2Q |
2002
Document No. D10840EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
COMPOUND TRANSISTOR
AQ1 SERIES
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
High current drives such as IC and motor solenoid available up
to 2 A
On-chip bias resistor
Low power consumption during drive
AQ1 SERIES LISTS
Products
R
1
(K
)
R
2
(K
)
AQ1L2N
0.47
1.0
AQ1A3M
1.0
1.0
AQ1F3M
2.2
2.2
AQ1F3P
2.2
10
AQ1L2Q
0.47
4.7
AQ1F2Q
0.22
2.2
AQ1A4A
10
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
20
V
Collector to emitter voltage
V
CEO
20
V
Emitter to base voltage
V
EBO
10
V
Collector current (DC)
I
C(DC)
2.0
A
Collector current (Pulse)
I
C(pulse)
*
3.0
A
Base current (DC)
I
B(DC)
0.04
A
Total power dissipation
P
T
750
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
* PW
≤
10 ms, duty cycle
≤
50 %
Electrode Connection
1. Emitter
2. Collector JEDEC: TO-92
3. Base
IEC
EIAJ
: SC-43B
: PA33
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