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參數(shù)資料
| 型號(hào)： | APTML102UM09R004T3AG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 154 A, 100 V, 0.01 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT PACKAGE-25 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 93K |
| 代理商： | APTML102UM09R004T3AG |
APTML102UM09R004T3AG
APT
M
L
102UM
09R004T
3AG
–
Rev
0
Novem
b
er
,2009
www.microsemi.com
1 – 3
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
Pins 13/14 ; 29/30 ; 31/32 must be shorted together
Absolute maximum ratings (per leg)
* Output current per leg must be limited to 67A @ TC=25°C and 47A @ TC=80°C to not exceed the shunt specification. In addition
the current capability must be limited to 75A on pins 13/14 to not exceed current capability of the pins.
In saturation mode
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
100
V
Tc = 25°C
154*
ID
Continuous Drain Current
Tc = 80°C
115*
IDM
Pulsed Drain current
430
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
10
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
480
W
IAR
Avalanche current (repetitive and non repetitive)
100
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
Application
Electronic load dedicated to power supplies and
battery discharge testing
Features
Linear MOSFET
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
AlN substrate for improved thermal performance
Benefits
Direct mounting to heatsink (isolated package)
easy series and parallels combinations for power and
voltage improvements
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Linear MOSFET
Power Module
VDSS = 100V
RDSon = 09mΩ typ @ Tj = 25°C
ID = 154A* @ Tc = 25°C
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