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參數(shù)資料
| 型號(hào)： | APTM50UM13S-ALN |
| 元件分類： | JFETs |
| 英文描述： | 335 A, 500 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-4 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 301K |
| 代理商： | APTM50UM13S-ALN |
APTM50UM13S-AlN
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J
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2004
APT website – http://www.advancedpower.com
1 – 6
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Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
500
V
Tc = 25°C
335
ID
Continuous Drain Current
Tc = 80°C
250
IDM
Pulsed Drain current
1340
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
13
m
PD
Maximum Power Dissipation
Tc = 25°C
3290
W
IAR
Avalanche current (repetitive and non repetitive)
71
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 500V
RDSon = 13m max @ Tj = 25°C
ID = 335A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS 7 MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
AlN substrate for improved thermal performance
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Single switch
Series & parallel diodes
MOSFET Power Module
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