- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378406 > APTM50UM09FAG (MICROSEMI POWER PRODUCTS GROUP) Single Switch MOSFET Power Module PDF資料下載
參數(shù)資料
| 型號： | APTM50UM09FAG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | Single Switch MOSFET Power Module |
| 中文描述： | 497 A, 500 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SP6 PACKAGE, 2 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 284K |
| 代理商： | APTM50UM09FAG |
APTM50UM09FAG
A
www.microsemi.com
2 – 6
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
V
GS
= 0V,V
DS
= 500V
V
GS
= 0V,V
DS
= 400V
V
GS
= 10V, I
D
= 248.5A
V
GS
= V
DS
, I
D
= 30mA
V
GS
= ±30
V, V
DS
= 0V
Min
3
Typ
9
Max
600
3000
10
5
±450
Unit
T
j
= 25°C
T
j
= 125°C
I
DSS
Zero Gate Voltage Drain Current
μA
R
DS(on)
V
GS(th)
I
GSS
Dynamic Characteristics
Symbol Characteristic
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Q
g
Total gate Charge
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
m
V
nA
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
Min
Typ
63.3
12.4
0.63
1200
Max
Unit
nF
Q
gs
Q
gd
Gate – Source Charge
300
Gate – Drain Charge
V
GS
= 10V
V
Bus
= 250V
I
D
=497A
630
nC
T
d(on)
T
r
T
d(off)
T
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
21
42
96
100
Inductive switching @ 125°C
V
GS
= 15V
V
Bus
= 333V
I
D
= 497A
R
G
= 0.5
ns
E
on
Turn-on Switching Energy
6
E
off
Turn-off Switching Energy
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 333V
I
D
= 497A,
R
G
= 0.5
6.2
mJ
E
on
Turn-on Switching Energy
9.48
E
off
Turn-off Switching Energy
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 333V
I
D
= 497A,
R
G
= 0.5
6.96
mJ
Source - Drain diode ratings and characteristics
Symbol Characteristic
I
S
Continuous Source current
(Body diode)
V
SD
Diode Forward Voltage
dv/dt
Peak Diode Recovery
X
Test Conditions
Min
Typ
15.6
60
Max
497
371
1.3
18
300
600
Unit
Tc = 25°C
Tc = 80°C
A
V
GS
= 0V, I
S
= - 497A
V
V/ns
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
t
rr
Reverse Recovery Time
ns
Q
rr
Reverse Recovery Charge
I
S
= - 497A
V
R
= 333V
di
S
/dt = 600A/μs
μC
X
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
I
S
≤
- 497A di/dt
≤
700A/μs V
R
≤
V
DSS
T
j
≤
150°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTM50UM13SAG | Single switch Series & parallel diodes MOSFET Power Module |
| APTRG8A120 | Dual IGBT Isolated Driver |
| AR2X | IC socket screw machine |
| AR629A-U9MIO | MICROCIRCIT DATA SHEET |
| AR629AU9 | MICROCIRCIT DATA SHEET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTM50UM09F-ALN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Single Switch MOSFET Power Module |
| APTM50UM09FT6AG | 制造商:Microsemi Corporation 功能描述:POWER FREDFET TRANSISTOR |
| APTM50UM13SAG | 功能描述:MOSFET N-CH 500V 335A SP6 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM50UM13S-ALN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Single switch Series & parallel diodes MOSFET Power Module |
| APTM50UM19S | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Single switch Series & parallel diodes MOSFET Power Module |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。