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參數(shù)資料
| 型號(hào)： | APTM50HM38FG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | Full - Bridge MOSFET Power Module |
| 中文描述： | 90 A, 500 V, 0.045 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP6, 12 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 297K |
| 代理商： | APTM50HM38FG |
APTM50HM38FG
A
www.microsemi.com
4 – 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
0.00001
0.0001
0.001
rectangular Pulse Duration (Seconds)
0.01
0.1
1
10
T
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5.5V
6V
6.5V
7V
7.5V
8V
0
50
100
150
200
250
300
350
0
5
10
15
20
25
V
DS
, Drain to Source Voltage (V)
I
D
,
V
GS
=10&15V
Low Voltage Output Characteristics
Transfert Characteristics
T
J
=-55°C
T
J
=25°C
T
J
=125°C
0
50
100
150
200
250
0
1
2
3
4
5
6
7
8
V
GS
, Gate to Source Voltage (V)
I
D
,
V
DS
> I
D
(on)xR
DS
(on)MAX
250μs pulse test @ < 0.5 duty cycle
R
DS
(on) vs Drain Current
V
GS
=10V
V
GS
=20V
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
0
50
I
D
, Drain Current (A)
100
150
200
R
D
(
Normalized to
V
GS
=10V @ 45A
0
20
40
60
80
100
25
50
75
100
125
150
T
C
, Case Temperature (°C)
I
D
,
DC Drain Current vs Case Temperature
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| APTM50HM65FT | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full - Bridge MOSFET Power Module |
| APTM50HM65FT3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full - Bridge MOSFET Power Module |
| APTM50HM65FT3G | 功能描述:MOSFET MOD FULL BRIDGE 500V SP3 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM50HM65FTG | 功能描述:MOSFET MODULE FULL BRIDGE SP4 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
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