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參數(shù)資料
| 型號： | APTM50H10FT3 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 37 A, 500 V, 0.1 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-25 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 321K |
| 代理商： | APTM50H10FT3 |
APTM50H10FT3
A
P
T
M
50H
10F
T
3–
R
ev
1
D
ecem
ber
,2004
APT website – http://www.advancedpower.com
2 - 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
100
IDSS
Zero Gate Voltage Drain Current
VGS = 0V
VDS = 500V
Tj = 125°C
500
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 18.5A
100
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 1mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
4367
Coss
Output Capacitance
894
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
61
pF
Qg
Total gate Charge
96
Qgs
Gate – Source Charge
24
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 37A
49
nC
Td(on)
Turn-on Delay Time
15
Tr
Rise Time
21
Td(off)
Turn-off Delay Time
73
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 37A
RG = 5
52
ns
Eon
Turn-on Switching Energy
566
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 37A, RG = 5
545
J
Eon
Turn-on Switching Energy
931
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 37A, RG = 5
635
J
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
37
IS
Continuous Source current
(Body diode)
Tc = 80°C
28
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 37A
1.3
V
dv/dt
Peak Diode Recovery
15
V/ns
Tj = 25°C
280
trr
Reverse Recovery Time
Tj = 125°C
600
ns
Tj = 25°C
2.3
Qrr
Reverse Recovery Charge
IS = - 37A
VR = 250V
diS/dt = 100A/s
Tj = 125°C
6.4
C
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 37A
di/dt
≤ 100A/s
VR ≤ VDSS
Tj ≤ 150°C
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