參數(shù)資料
型號(hào): APTM50DHM38
元件分類: JFETs
英文描述: 90 A, 500 V, 0.038 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: MODULE-8
文件頁(yè)數(shù): 2/6頁(yè)
文件大小: 292K
代理商: APTM50DHM38
APTM50DHM38
A
PT
M
50D
H
M
38
R
ev
2
A
pr
il,
2004
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 375A
500
V
VGS = 0V,VDS = 500V
Tj = 25°C
150
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 400V
Tj = 125°C
750
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 45A
38
m
W
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 5mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±150
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
11.2
Coss
Output Capacitance
2.4
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.18
nF
Qg
Total gate Charge
246
Qgs
Gate – Source Charge
66
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 90A
130
nC
Td(on)
Turn-on Delay Time
18
Tr
Rise Time
35
Td(off)
Turn-off Delay Time
87
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 90A
RG = 2
W
77
ns
Eon
Turn-on Switching Energy
u
1510
Eoff
Turn-off Switching Energy
v
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 90A, RG = 2
1452
J
Eon
Turn-on Switching Energy
u
2482
Eoff
Turn-off Switching Energy
v
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 90A, RG = 2
1692
J
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 80°C
100
A
IF = 100A
1.6
1.8
IF = 200A
1.9
VF
Diode Forward Voltage
IF = 100A
Tj = 125°C
1.4
V
Tj = 25°C
180
trr
Reverse Recovery Time
IF = 100A
VR = 400V
di/dt = 200A/s
Tj = 125°C
220
ns
Tj = 25°C
390
Qrr
Reverse Recovery Charge
IF = 100A
VR = 400V
di/dt = 200A/s
Tj = 125°C
1450
nC
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
相關(guān)PDF資料
PDF描述
APTM50DSK10T3 37 A, 500 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTM50DSK10T3 37 A, 500 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTM50DUM35T 99 A, 500 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTM50DUM35T 99 A, 500 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTM50H10FT3 37 A, 500 V, 0.1 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APTM50DHM38G 功能描述:MOSFET MOD ASYMMETRIC BRIDGE SP6 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:*
APTM50DHM65T 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR
APTM50DHM65T3G 制造商:Microsemi Corporation 功能描述:POWER MODULE - MOSFET - Bulk
APTM50DHM65TG 功能描述:MOSFET MOD ASYMMETRIC BRIDGE SP4 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:*
APTM50DHM75T 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Asymmetrical - Bridge MOSFET Power Module