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參數(shù)資料
| 型號： | APTM50DAM35T |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 99 A, 500 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-12 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 302K |
| 代理商： | APTM50DAM35T |
APTM50DAM35T
A
PT
M
50D
A
M
35T
–
R
ev
2
M
ay,
2004
APT website – http://www.advancedpower.com
5 – 6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
Breakdown Voltage vs Temperature
BV
DS
S
,D
rai
n
t
o
S
o
ur
c
eB
rea
kd
o
w
n
V
o
lt
ag
e(
N
o
rm
a
li
ze
d
)
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
R
DS
(o
n)
,D
ra
in
t
o
S
o
u
rce
O
N
resi
st
a
n
c
e
(No
rm
al
iz
e
d
)
VGS=10V
ID=49.5A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
255075 100 125 150
TC, Case Temperature (°C)
V
GS
(T
H
),
T
h
re
sh
ol
d
Vo
lt
a
g
e
(No
rm
al
iz
e
d
)
Maximum Safe Operating Area
10 ms
1 ms
100 us
100 ms
1
10
100
1000
1
10
100
1000
VDS, Drain to Source Voltage (V)
I D
,Dra
in
Cu
rre
n
t(A)
limited by R
DSon
Single pulse
TJ=150°C
Ciss
Crss
Coss
10
100
1000
10000
100000
0
1020304050
VDS, Drain to Source Voltage (V)
C,
Ca
p
a
ci
ta
n
ce
(p
F
)
Capacitance vs Drain to Source Voltage
VDS=100V
VDS=250V
VDS=400V
0
2
4
6
8
10
12
14
0
50
100 150 200 250 300 350
Gate Charge (nC)
V
GS
,
G
at
e
t
o
S
o
u
rce
V
o
lt
ag
e
(V
)
Gate Charge vs Gate to Source Voltage
ID=99A
TJ=25°C
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|---|---|
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| APTM50DAM38TG | 功能描述:MOSFET N-CH 500V 90A SP4 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
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