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參數(shù)資料
| 型號： | APTM50AM24S |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 150 A, 500 V, 0.024 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 296K |
| 代理商： | APTM50AM24S |
APTM50AM24S
A
P
T
M
50A
M
24S
–
R
ev
1
J
une
,2004
APT website – http://www.advancedpower.com
6 – 6
Delay Times vs Current
td(on)
td(off)
0
10
20
30
40
50
60
30
80
130
180
230
280
ID, Drain Current (A)
t d(
o
n)
an
d
t
d(o
ff)
(n
s
)
VDS=333V
RG=0.8
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
30
80
130
180
230
280
ID, Drain Current (A)
t r
an
d
t
f(n
s
)
VDS=333V
RG=0.8
TJ=125°C
L=100H
0
100
200
300
400
500
600
30
60
90
120
150
ID, Drain Current (A)
Fr
e
que
nc
y
(
k
H
z
)
Operating Frequency vs Drain Current
VDS=333V
D=50%
RG=0.8
TJ=125°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
I DR
,R
ever
se
D
rai
n
C
u
rr
en
t
(A
)
Source to Drain Diode Forward Voltage
Switching Energy vs Current
Eon
Eoff
0
1
2
3
4
5
6
7
30
80
130
180
230
280
ID, Drain Current (A)
S
w
it
ch
in
g
E
n
er
g
y
(
m
J)
VDS=333V
RG=0.8
TJ=125°C
L=100H
Eon
Eoff
0
2
4
6
8
01234
56789
Gate Resistance (Ohms)
Sw
it
c
h
in
g
En
er
g
y(
m
J
)
Switching Energy vs Gate Resistance
VDS=333V
ID=150A
TJ=125°C
L=100H
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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