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參數(shù)資料
| 型號： | APTM50AM19STG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 170 A, 500 V, 0.019 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-9 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 305K |
| 代理商： | APTM50AM19STG |
APTM50AM19ST
A
PT
M
50A
M
19S
T
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
2 – 7
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 500A
500
V
VGS = 0V,VDS = 500V
Tj = 25°C
500
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 400V
Tj = 125°C
2000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 85A
19
m
W
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 10mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±200
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
22.4
Coss
Output Capacitance
4.8
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.36
nF
Qg
Total gate Charge
492
Qgs
Gate – Source Charge
132
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 170A
260
nC
Td(on)
Turn-on Delay Time
18
Tr
Rise Time
35
Td(off)
Turn-off Delay Time
87
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 170A
RG = 1
W
77
ns
Eon
Turn-on Switching Energy
u
3020
Eoff
Turn-off Switching Energy
v
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 170A, RG = 1
2904
J
Eon
Turn-on Switching Energy
u
4964
Eoff
Turn-off Switching Energy
v
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 170A, RG = 1
3384
J
Series Schottky diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 85°C
120
A
IF = 120A
0.77
VF
Diode Forward Voltage
IF = 120A
Tj = 125°C
0.62
V
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
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| APTM50AM19ST | 170 A, 500 V, 0.019 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM50AM19ST | 170 A, 500 V, 0.019 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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