- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄51277 > APTM20TDUM16P 104 A, 200 V, 0.016 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | APTM20TDUM16P |
| 元件分類： | JFETs |
| 英文描述： | 104 A, 200 V, 0.016 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-21 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 313K |
| 代理商： | APTM20TDUM16P |
APTM20TDUM16P
A
P
T
M
20T
D
U
M
16P
–
R
ev
0
S
ept
em
be
r,
2004
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 250A
200
V
VGS = 0V,VDS = 200V
Tj = 25°C
250
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 160V
Tj = 125°C
1000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 52A
16
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.5mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
7220
Coss
Output Capacitance
2330
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
146
pF
Qg
Total gate Charge
140
Qgs
Gate – Source Charge
53
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 100V
ID =104A
67
nC
Td(on)
Turn-on Delay Time
32
Tr
Rise Time
64
Td(off)
Turn-off Delay Time
88
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ID = 104A
RG = 5
116
ns
Eon
Turn-on Switching Energy
849
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 104A, RG = 5
929
J
Eon
Turn-on Switching Energy
936
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 104A, RG = 5
986
J
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
104
IS
Continuous Source current
(Body diode)
Tc = 80°C
74
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 104A
1.3
V
dv/dt
Peak Diode Recovery
5
V/ns
trr
Reverse Recovery Time
Tj = 25°C
360
ns
Qrr
Reverse Recovery Charge
IS = - 104A
VR = 133V
diS/dt = 100A/s
Tj = 25°C
6.7
C
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 104A
di/dt
≤ 700A/s
VR ≤ VDSS
Tj ≤ 150°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTM20TDUM16P | 104 A, 200 V, 0.016 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM20UM03F-ALN | 580 A, 200 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM20UM09S | 195 A, 200 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM20UM09SG | 195 A, 200 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM20UM09S | 195 A, 200 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTM20TDUM16PG | 功能描述:MOSFET MOD TRIPLE DUAL SRC SP6-P RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM20UM03FAG | 功能描述:POWER MOD MOSFET 200V 580A SP6 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM20UM03F-ALN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Single Switch MOSFET Power Module |
| APTM20UM04SAG | 功能描述:MOSFET N-CH 200V 417A SP6 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM20UM04S-ALN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Single switch Series & parallel diodes MOSFET Power Module |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。