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參數(shù)資料
| 型號： | APTM20HM20STG |
| 元件分類： | JFETs |
| 英文描述： | 89 A, 200 V, 0.024 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, MODULE-14 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 314K |
| 代理商： | APTM20HM20STG |
APTM20HM20STG
A
P
T
M
20H
M
20S
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G
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3
N
ove
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2005
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 200V
Tj = 25°C
100
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 160V
Tj = 125°C
500
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 44.5A
20
24
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.5mA
3
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
6850
Coss
Output Capacitance
2180
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
97
pF
Qg
Total gate Charge
112
Qgs
Gate – Source Charge
43
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 100V
ID = 75A
47
nC
Td(on)
Turn-on Delay Time
28
Tr
Rise Time
56
Td(off)
Turn-off Delay Time
81
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ID = 75A
RG = 5
99
ns
Eon
Turn-on Switching Energy
463
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 75A, RG = 5
455
J
Eon
Turn-on Switching Energy
608
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 75A, RG = 5
531
J
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
200
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=200V
Tj = 125°C
500
A
IF
DC Forward Current
Tc = 85°C
30
A
IF = 30A
1.1
1.15
IF = 60A
1.4
VF
Diode Forward Voltage
IF = 30A
Tj = 125°C
0.9
V
Tj = 25°C
24
trr
Reverse Recovery Time
Tj = 125°C
48
ns
Tj = 25°C
33
Qrr
Reverse Recovery Charge
IF = 30A
VR = 133V
di/dt = 200A/s
Tj = 125°C
150
nC
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