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參數(shù)資料
| 型號： | APTM20HM20FT |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 89 A, 200 V, 0.02 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-14 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 300K |
| 代理商： | APTM20HM20FT |
APTM20HM20FT
A
PT
M
20H
M
20F
T
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 250A
200
V
VGS = 0V,VDS = 200V
Tj = 25°C
250
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 160V
Tj = 125°C
1000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 44.5A
20
m
W
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.5mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
6850
Coss
Output Capacitance
2180
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
97
pF
Qg
Total gate Charge
112
Qgs
Gate – Source Charge
43
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 100V
ID = 75A
47
nC
Td(on)
Turn-on Delay Time
28
Tr
Rise Time
56
Td(off)
Turn-off Delay Time
81
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ID = 75A
RG = 5
W
99
ns
Eon
Turn-on Switching Energy
u
463
Eoff
Turn-off Switching Energy
v
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 75A, RG = 5
455
J
Eon
Turn-on Switching Energy
u
608
Eoff
Turn-off Switching Energy
v
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 75A, RG = 5
531
J
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
89
IS
Continuous Source current
(Body diode)
Tc = 80°C
66
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 75A
1.3
V
dv/dt
Peak Diode Recovery
w
8
V/ns
Tj = 25°C
220
trr
Reverse Recovery Time
Tj = 125°C
420
ns
Tj = 25°C
1.07
Qrr
Reverse Recovery Charge
IS = - 75A
VR = 133V
diS/dt = 100A/s
Tj = 125°C
2.9
C
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
w dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS
- 75A
di/dt
700A/s
VR
VDSS
Tj
150°C
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