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參數(shù)資料
| 型號(hào)： | APTM20HM16FT |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 104 A, 200 V, 0.016 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-14 |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 296K |
| 代理商： | APTM20HM16FT |
APTM20HM16FT
A
PT
M
20H
M
16F
T
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
4 – 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Th
e
rm
al
Im
p
e
d
a
n
c
e
(°
C
/W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
6.5V
7V
7.5V
8V
8.5V
10V
VGS=15V
9V
0
50
100
150
200
250
300
350
0
4
8
1216202428
VDS, Drain to Source Voltage (V)
I D
,Dra
in
Cu
rre
n
t
(A)
Low Voltage Output Characteristics
Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
50
100
150
200
250
300
012
34
567
89 10
VGS, Gate to Source Voltage (V)
I D
,Dra
in
Cu
rre
n
t
(A)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.8
0.9
1
1.1
1.2
0
25
50
75
100
125
150
ID, Drain Current (A)
R
D
S
(on)
D
rai
n
t
o
S
o
ur
c
eO
N
R
e
si
st
a
n
c
e
Normalized to
VGS=10V @ 52A
0
20
40
60
80
100
120
25
50
75
100
125
150
TC, Case Temperature (°C)
I D
,
DC
Dra
in
Cu
rre
n
t(A)
DC Drain Current vs Case Temperature
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| APTM20HM16FT | 104 A, 200 V, 0.016 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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| APTM20HM20FT | 89 A, 200 V, 0.02 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM20HM20STG | 89 A, 200 V, 0.024 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
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| APTM20HM20STG | 功能描述:MOSFET MOD FULL BRDG SER/PAR SP4 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
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