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參數(shù)資料
| 型號： | APTM20HM08F |
| 元件分類： | JFETs |
| 英文描述： | 208 A, 200 V, 0.008 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-12 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大小： | 290K |
| 代理商： | APTM20HM08F |
APTM20HM08F
A
PT
M
20H
M
08F
–R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
5 – 6
0.90
0.95
1.00
1.05
1.10
1.15
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
BV
DS
S
,D
rai
n
t
o
S
o
u
rc
eB
rea
kd
ow
n
Vo
lt
ag
e
(No
rm
a
li
ze
d
)
Breakdown Voltage vs Temperature
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
R
D
S
(o
n)
,D
ra
in
t
o
S
o
u
rce
O
N
r
e
si
st
a
n
c
e
(No
rm
al
iz
e
d
)
VGS=10V
ID= 104A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25 0
25 50 75 100 125 150
TC, Case Temperature (°C)
V
GS
(T
H
),
T
h
re
sh
ol
d
Vo
lt
a
g
e
(No
rm
al
iz
e
d
)
Maximum Safe Operating Area
100ms
10ms
1ms
100s
1
10
100
1000
1
10
100
1000
VDS, Drain to Source Voltage (V)
I D
,Dra
in
Cu
rre
n
t(A)
Single pulse
TJ=150°C
limited by
RDSon
Ciss
Crss
Coss
100
1000
10000
100000
0
1020304050
VDS, Drain to Source Voltage (V)
C,
Ca
p
ac
ita
n
c
e(p
F
)
Capacitance vs Drain to Source Voltage
VDS=40V
VDS=100V
VDS=160V
0
2
4
6
8
10
12
14
0
40
80 120 160 200 240 280 320
Gate Charge (nC)
V
GS
,
G
a
te
t
o
S
o
u
rce
V
o
lt
ag
e
(V
)
Gate Charge vs Gate to Source Voltage
ID=208A
TJ=25°C
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APTM20HM08FG | 功能描述:MOSFET MODULE FULL BRIDGE SP6 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTM20HM10F | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full - Bridge MOSFET Power Module |
| APTM20HM10FG | 功能描述:MOSFET MODULE FULL BRIDGE SP6 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTM20HM16FT | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full - Bridge MOSFET Power Module |
| APTM20HM16FTG | 功能描述:MOSFET MODULE FULL BRIDGE SP4 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
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