參數(shù)資料
型號: APTM100DA18CT1G
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 40 A, 1000 V, 0.216 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SP1, 12 PIN
文件頁數(shù): 5/5頁
文件大?。?/td> 199K
代理商: APTM100DA18CT1G
APTM100DA18CT1G
APT
M
100DA18CT
1G
Rev
0
Septem
ber
,2009
www.microsemi.com
5 – 5
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
1.2
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Th
e
rm
a
lIm
p
e
da
nc
e
(
°C
/W)
Forward Characteristics
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0
10
20
30
40
0
0.5
11.5
22.5
33.5
VF Forward Voltage (V)
I F
Forwa
rd
Current
(A)
Reverse Characteristics
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0
50
100
150
200
400
600
800
1000 1200 1400 1600
VR Reverse Voltage (V)
I R
Revers
e
Cu
rren
t(
A)
Capacitance vs.Reverse Voltage
0
200
400
600
800
1000
1200
1400
1
10
100
1000
VR Reverse Voltage
C
,C
a
pa
cit
a
nce
(
p
F)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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