參數(shù)資料
型號(hào): APTGV50H60BG
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: IGBT 晶體管
英文描述: 80 A, 600 V, N-CHANNEL IGBT
封裝: ROHS COMPLIANT, SP4, MODULE-21
文件頁(yè)數(shù): 1/15頁(yè)
文件大?。?/td> 437K
代理商: APTGV50H60BG
APTGV50H60BG
A
P
TG
V50H
60BG
R
ev
0
Septe
m
be
r,
2007
www.microsemi.com
1-15
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Q3
OUT1A
VBUS1
CR2
Q4
E4
K
D5
Q1
0/VBUS
E2
Q2
G2
S5
SK5
G5
Q
5
CR5
G1
CR1
K
CR4
CR3
VBUS2
OUT2A
D5
OUT2B
OUT1B
S5
G3
G4
Full bridge top switches : Trench + Field Stop IGBT
Full bridge bottom switches : FAST NPT IGBT
Q5 boost chopper : CoolMOS
D5
G2
S5
G5
SK5
VBUS 1
VBUS 2
OUT 2A
OUT 2B
G3
E4
G4
0/VBUS
E2
OUT 1A
OUT 1B
G1
K
All multiple inputs and outputs must be shorted together
OUT1A/OUT1B ; VBUS1/VBUS2 ; K/K ; …
Trench & Field Stop IGBT Q1, Q3:
VCES = 600V , IC = 50A @ Tc = 80°C
Fast NPT IGBT Q2, Q4:
VCES = 600V ; IC = 50A @ Tc = 80°C
CoolMOS Q5:
VCES = 600V ; IC = 49A @ Tc = 25°C
Application
Solar converter
Features
Q2, Q4 (FAST Non Punch Through (NPT) IGBT)
- Switching frequency up to 100 kHz
- RBSOA & SCSOA rated
- Low tail current
Q1, Q3 (Trench & Field Stop IGBT)
- Low voltage drop
- Switching frequency up to 20 kHz
- RBSOA & SCSOA rated
- Low tail current
Q5 (CoolMOS)
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Benefits
Optimized conduction & switching losses
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal
for easy PCB mounting
Low profile
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
Boost chopper CoolMos
+ full bridge
NPT & Trench + Field Stop IGBT
Power module
相關(guān)PDF資料
PDF描述
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