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參數(shù)資料
| 型號： | APTGT75X120RTP3 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 105 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-35 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 269K |
| 代理商： | APTGT75X120RTP3 |
APTGT75X120RTP3
APTGT75X120BTP3
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APT website – http://www.advancedpower.com
2 - 4
IGBT & Diode Brake (only for APTGT75X120BTP3) Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC = 25°C
60
IC
Continuous Collector Current
TC = 80°C
50
ICM
Pulsed Collector Current
TC = 25°C
100
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
200
W
IF
DC Forward Current
TC = 80°C
25
A
IGBT & Diode Inverter Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC = 25°C
105
IC
Continuous Collector Current
TC = 80°C
75
ICM
Pulsed Collector Current
TC = 25°C
150
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
350
W
RBSOA Reverse Bias Save Operating Area
Tj = 125°C
150A @ 1100V
IF
DC Forward Current
TC = 80°C
75
IFRM
Repetitive Peak Forward Current
tp = 1ms
150
A
2. Electrical Characteristics
Diodes Rectifier Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
IR
Reverse Current
VR = 1600V
Tj = 150°C
3
mA
VF
Forward Voltage
IF = 75A
Tj = 150°C
1.2
V
RthJC
Junction to Case
0.65
°C/W
IGBT Brake & Diode (only for APTGT75X120BTP3) Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
400
A
Tj = 25°C
1.4
1.7
2.1
VCE(on) Collector Emitter on Voltage
VGE = 15V
IC = 50A
Tj = 125°C
2.0
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 2mA
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
600
nA
Cies
Input Capacitance
3600
Coes
Output Capacitance
188
Cres
Reverse Transfer Capacitance
VGE = 0V,
VCE = 25V
f = 1MHz
163
pF
Tj = 25°C
1.6
VF
Forward Voltage
VGE = 0V
IF = 25A
Tj = 125°C
1.8
V
IGBT
0.6
RthJC
Junction to Case
Diode
1.2
°C/W
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| APTGT75X120RTP3 | 105 A, 1200 V, N-CHANNEL IGBT |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGT75X120RTPG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT75X120TE3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge Trench IGBT Power Module |
| APTGT75X120TE3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT75X60T3G | 功能描述:IGBT MOD TRENCH 3PH BRIDGE SP3 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGTQ100A65T1G | 功能描述:POWER MODULE - IGBT 制造商:microsemi corporation 系列:- 零件狀態(tài):在售 IGBT 類型:- 配置:半橋 電壓 - 集射極擊穿（最大值）:650V 電流 - 集電極（Ic）（最大值）:100A 功率 - 最大值:250W 不同?Vge，Ic 時(shí)的?Vce（on）:2.2V @ 15V，100A 電流 - 集電極截止（最大值）:100μA 不同?Vce 時(shí)的輸入電容（Cies）:6nF @ 25V 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:是 工作溫度:-40°C ~ 175°C（TJ） 安裝類型:底座安裝 封裝/外殼:模塊 供應(yīng)商器件封裝:SP1 標(biāo)準(zhǔn)包裝:1 |
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