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參數(shù)資料
| 型號： | APTGT50X120RTP3G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 55 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-35 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 269K |
| 代理商： | APTGT50X120RTP3G |
APTGT50X120RTP3
APTGT50X120BTP3
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APT website – http://www.advancedpower.com
2 - 4
IGBT & Diode Brake (only for APTGT50X120BTP3) Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC = 25°C
55
IC
Continuous Collector Current
TC = 80°C
35
ICM
Pulsed Collector Current
TC = 25°C
80
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
200
W
IF
DC Forward Current
TC = 80°C
15
A
IGBT & Diode Inverter Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC = 25°C
75
IC
Continuous Collector Current
TC = 80°C
50
ICM
Pulsed Collector Current
TC = 25°C
100
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
270
W
RBSOA Reverse Bias Save Operating Area
Tj = 125°C
100A @ 1100V
IF
DC Forward Current
TC = 80°C
50
IFRM
Repetitive Peak Forward Current
tp = 1ms
100
A
2. Electrical Characteristics
Diodes Rectifier Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
IR
Reverse Current
VR = 1600V
Tj = 150°C
3
mA
VF
Forward Voltage
IF = 50A
Tj = 150°C
1.0
V
RthJC
Junction to Case
0.65
°C/W
IGBT Brake & Diode (only for APTGT50X120BTP3) Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
4
mA
Tj = 25°C
1.8
2.2
VCE(on) Collector Emitter on Voltage
VGE = 15V
IC = 35A
Tj = 125°C
2.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 1.5mA
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
500
nA
Cies
Input Capacitance
2530
Coes
Output Capacitance
132
Cres
Reverse Transfer Capacitance
VGE = 0V,
VCE = 25V
f = 1MHz
115
pF
Tj = 25°C
2.3
2.7
VF
Forward Voltage
VGE = 0V
IF = 35A
Tj = 125°C
2.5
V
IGBT
0.6
RthJC
Junction to Case
Diode
1.5
°C/W
相關PDF資料 |
PDF描述 |
|---|---|
| APTGT50X120BTP3G | 55 A, 1200 V, N-CHANNEL IGBT |
| APTGT50X120BTP3 | 55 A, 1200 V, N-CHANNEL IGBT |
| APTGT50X120RTP3 | 55 A, 1200 V, N-CHANNEL IGBT |
| APTGT50X120RTP3 | 55 A, 1200 V, N-CHANNEL IGBT |
| APTGT600SK60 | 500 A, 600 V, N-CHANNEL IGBT |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APTGT50X120RTPG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT50X170BTP3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module |
| APTGT50X170BTPG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT50X170RTP3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module |
| APTGT50X170TRPG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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