參數(shù)資料
型號(hào): APTGT50SK120D1
廠(chǎng)商: Advanced Power Technology Ltd.
英文描述: Buck chopper Trench IGBT Power Module
中文描述: 降壓斬波溝道IGBT功率模塊
文件頁(yè)數(shù): 2/3頁(yè)
文件大?。?/td> 154K
代理商: APTGT50SK120D1
APTGT50SK120D1
A
APT website – http://www.advancedpower.com
2 - 3
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BV
CES
Collector - Emitter Breakdown Voltage
I
CES
Zero Gate Voltage Collector Current
Test Conditions
V
GE
= 0V, I
C
= 2mA
V
GE
= 0V, V
CE
= 1200V
V
GE
=15V
I
C
= 50A
V
GE
= V
CE
, I
C
= 2mA
V
GE
= 20V, V
CE
= 0V
Min
1200
1.4
5.0
Typ
1.7
2.0
5.8
Max
5
2.1
6.5
400
Unit
V
mA
T
j
= 25°C
T
j
= 125°C
V
CE(on)
Collector Emitter on Voltage
V
V
GE(th)
I
GES
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
rss
Reverse Transfer Capacitance
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
E
off
Turn off Energy
Reverse diode ratings and characteristics
Test Conditions
V
GE
= 0V,V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 50A
R
G
= 18
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 50A
R
G
= 18
Min
Typ
3600
160
150
90
550
130
180
100
650
180
6.5
Max
Unit
pF
ns
ns
mJ
T
j
= 25°C
T
j
= 125°C
1.6
1.6
2.2
V
F
Forward Voltage
V
GE
= 0V
I
F
= 50A
I
F
= 50A
V
R
= 600V
di/dt =990A/μs
I
F
= 50A
V
R
= 600V
di/dt=990A/μs
V
E
rec
Reverse Recovery Energy
T
j
= 125°C
4
mJ
T
j
= 25°C
5.2
Q
rr
Reverse Recovery Charge
T
j
= 125°C
9.4
μC
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
0.45
0.75
Unit
IGBT
Diode
R
thJC
Junction to Case
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
2500
V
T
J
T
STG
T
C
-40
-40
-40
2
3
150
125
125
3.5
5
180
°C
For terminals
To Heatsink
M5
M6
Torque Mounting torque
N.m
Wt
Package Weight
g
相關(guān)PDF資料
PDF描述
APTGT50SK120TG Buck chopper Fast Trench + Field Stop IGBT Power Module
APTGT50SK170D1 Buck chopper Trench IGBT Power Module
APTGT50SK170T Buck chopper Trench + Field Stop IGBT Power Module
APTGT50TA170P Triple phase leg Trench IGBT Power Module
APTGT50TA60P Triple phase leg Trench + Field Stop IGBT Power Module
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APTGT50SK120D1G 功能描述:IGBT 1200V 75A 270W D1 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類(lèi)型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時(shí)的最大Vce(開(kāi)):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類(lèi)型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APTGT50SK120TG 功能描述:IGBT 1200V 75A 277W SP4 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類(lèi)型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時(shí)的最大Vce(開(kāi)):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類(lèi)型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APTGT50SK170D1 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Buck chopper Trench IGBT Power Module
APTGT50SK170D1G 功能描述:IGBT 1700V 70A 310W D1 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類(lèi)型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時(shí)的最大Vce(開(kāi)):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類(lèi)型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APTGT50SK170T 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Buck chopper Trench + Field Stop IGBT Power Module