參數(shù)資料
型號(hào): APTGT50H120T
元件分類: IGBT 晶體管
英文描述: 75 A, 1200 V, N-CHANNEL IGBT
封裝: MODULE-14
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 279K
代理商: APTGT50H120T
APTGT50H120T
A
P
T
G
T
50
H
120T
R
ev
0
M
ay,
2005
APT website – http://www.advancedpower.com
2 - 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
250
A
Tj = 25°C
1.7
2.1
VCE(sat)
Collector Emitter Saturation Voltage
VGE = 15V
IC = 50A
Tj = 125°C
2.0
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 2mA
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
3600
Coes
Output Capacitance
190
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
160
pF
Td(on)
Turn-on Delay Time
90
Tr
Rise Time
30
Td(off)
Turn-off Delay Time
420
Tf
Fall Time
Inductive Switching (25°C)
VGE = 15V
VBus = 600V
IC = 50A
RG = 18
70
ns
Td(on)
Turn-on Delay Time
90
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
520
Tf
Fall Time
90
ns
Eon
Turn-on Switching Energy
5
Eoff
Turn-off Switching Energy
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 50A
RG = 18
5.5
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
350
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 125°C
600
A
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 80°C
50
A
Tj = 25°C
1.4
1.9
VF
Diode Forward Voltage
IF = 50A
Tj = 125°C
1.3
V
Tj = 25°C
150
trr
Reverse Recovery Time
Tj = 125°C
250
ns
Tj = 25°C
4.5
Qrr
Reverse Recovery Charge
IF = 50A
VR = 600V
di/dt =2000A/s
Tj = 125°C
9
C
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