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參數(shù)資料
| 型號(hào)： | APTGT50H120T3 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 75 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-25 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 291K |
| 代理商： | APTGT50H120T3 |
APTGT50H120T3
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2004
APT website – http://www.advancedpower.com
2 - 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 2mA
1200
V
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
5
mA
Tj = 25°C
1.4
1.7
2.1
VCE(on)
Collector Emitter on Voltage
VGE =15V
IC = 50A
Tj = 125°C
2.0
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 2mA
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
3600
Crss
Reverse Transfer Capacitance
VGE = 0V,VCE = 25V
f = 1MHz
160
pF
Td(on)
Turn-on Delay Time
90
Tr
Rise Time
30
Td(off)
Turn-off Delay Time
420
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 50A
RG = 18
70
ns
Td(on)
Turn-on Delay Time
90
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
520
Tf
Fall Time
90
ns
Eon
Turn-on Switching Energy
5
Eoff
Turn-off Switching Energy
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 50A
RG = 18
5.5
mJ
Eon includes diode reverse recovery
In accordance with JEDEC standard JESD24-1
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 125°C
500
A
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 70°C
60
A
IF = 60A
2
2.5
IF = 120A
2.3
VF
Diode Forward Voltage
IF = 60A
Tj = 125°C
1.8
V
Tj = 25°C
400
trr
Reverse Recovery Time
Tj = 125°C
470
ns
Tj = 25°C
1200
Qrr
Reverse Recovery Charge
IF = 60A
VR = 800V
di/dt =200A/s
Tj = 125°C
4000
nC
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| APTGT50H120T3 | 75 A, 1200 V, N-CHANNEL IGBT |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGT50H120T3AG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT50H120T3G | 功能描述:IGBT MOD TRENCH FULL BRIDGE SP3 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開(kāi)）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGT50H120TG | 功能描述:IGBT MOD TRENCH FULL BRIDGE SP4 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開(kāi)）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGT50H170T | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full - Bridge Trench + Field Stop IGBT Power Module |
| APTGT50H170TG | 功能描述:IGBT MOD TRENCH FULL BRIDGE SP4 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開(kāi)）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
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