參數(shù)資料
型號(hào): APTGT50DDA60T3
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類(lèi): IGBT 晶體管
英文描述: 80 A, 600 V, N-CHANNEL IGBT
封裝: MODULE-25
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 0K
代理商: APTGT50DDA60T3
APTGT50DDA60T3
A
P
T
G
T
50
D
A
60T
3–
R
ev
0,
M
ay,
2005
APT website – http://www.advancedpower.com
2 - 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 600V
250
A
Tj = 25°C
1.5
1.9
VCE(sat)
Collector Emitter Saturation Voltage
VGE =15V
IC = 50A
Tj = 150°C
1.7
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 600A
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
600
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
3150
Coes
Output Capacitance
200
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
95
pF
Td(on)
Turn-on Delay Time
110
Tr
Rise Time
45
Td(off)
Turn-off Delay Time
200
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 50A
RG = 10
40
ns
Td(on)
Turn-on Delay Time
120
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
250
Tf
Fall Time
60
ns
Eon
Turn-on Switching Energy
0.87
Eoff
Turn-off Switching Energy
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 50A
RG = 10
1.75
mJ
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 150°C
500
A
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 80°C
50
A
Tj = 25°C
1.6
2
VF
Diode Forward Voltage
IF = 50A
VGE = 0V
Tj = 150°C
1.5
V
Tj = 25°C
125
trr
Reverse Recovery Time
Tj = 150°C
220
ns
Tj = 25°C
2.6
Qrr
Reverse Recovery Charge
IF = 50A
VR = 300V
di/dt =1800A/s
Tj = 150°C
5.4
C
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