參數(shù)資料
型號: APTGT450DU60
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: IGBT 晶體管
英文描述: 550 A, 600 V, N-CHANNEL IGBT
封裝: MODULE-7
文件頁數(shù): 1/5頁
文件大?。?/td> 268K
代理商: APTGT450DU60
APTGT450DU60
A
P
T
G
T
450
D
U
60
R
ev
0
M
ay,
2005
APT website – http://www.advancedpower.com
1 - 5
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Q2
E
Q1
C1
C2
E2
G2
E1
G1
C2
C1
E
E1
G1
G2
E2
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC= 25°C
550
IC
Continuous Collector Current
TC= 80°C
450
ICM
Pulsed Collector Current
TC= 25°C
600
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC= 25°C
1750
W
RBSOA
Reverse Bias Safe Operating Area
Tj = 150°C
900A @ 550V
VCES = 600V
IC = 450A @ Tc = 80°C
Application
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Trench + Field Stop IGBT Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Dual common source
Trench + Field Stop IGBT
Power Module
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PDF描述
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