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參數(shù)資料
| 型號： | APTGT35X120RTP3 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 40 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-35 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 269K |
| 代理商： | APTGT35X120RTP3 |
APTGT35X120RTP3
APTGT35X120BTP3
A
PT
G
T
35
X
12
0B
T
P3
–
R
ev
1
D
ec
em
be
r,
20
03
APT website – http://www.advancedpower.com
2 - 4
IGBT & Diode Brake (only for APTGT35X120BTP3) Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC = 25°C
40
IC
Continuous Collector Current
TC = 80°C
25
ICM
Pulsed Collector Current
TC = 25°C
65
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
160
W
IF
DC Forward Current
TC = 80°C
15
A
IGBT & Diode Inverter Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC = 25°C
55
IC
Continuous Collector Current
TC = 80°C
35
ICM
Pulsed Collector Current
TC = 25°C
80
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
200
W
RBSOA Reverse Bias Save Operating Area
Tj = 125°C
80A @ 1100V
IF
DC Forward Current
TC = 80°C
35
IFRM
Repetitive Peak Forward Current
tp = 1ms
50
A
2. Electrical Characteristics
Diodes Rectifier Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
IR
Reverse Current
VR = 1600V
Tj = 150°C
3
mA
VF
Forward Voltage
IF = 50A
Tj = 150°C
1.0
V
RthJC
Junction to Case
0.65
°C/W
IGBT Brake & Diode (only for APTGT35X120BTP3) Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
4
mA
Tj = 25°C
1.4
1.7
2.1
VCE(on) Collector Emitter on Voltage
VGE = 15V
IC = 25A
Tj = 125°C
2.0
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 1mA
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
600
nA
Cies
Input Capacitance
1808
Coes
Output Capacitance
95
Cres
Reverse Transfer Capacitance
VGE = 0V,
VCE = 25V
f = 1MHz
82
pF
Tj = 25°C
2.3
2.7
VF
Forward Voltage
VGE = 0V
IF = 35A
Tj = 125°C
2.5
V
IGBT
0.6
RthJC
Junction to Case
Diode
1.5
°C/W
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PDF描述 |
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| APTGT35X120BTP3G | 40 A, 1200 V, N-CHANNEL IGBT |
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| APTGT400DU120 | 500 A, 1200 V, N-CHANNEL IGBT |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGT35X120RTPG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT35X120T3G | 功能描述:IGBT MOD TRENCH 3PH BRIDGE SP3 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGT400A120 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Phase leg Fast Trench + Field Stop IGBT Power Module |
| APTGT400A120D3G | 功能描述:IGBT MOD TRENCH PHASE LEG D3 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGT400A120G | 功能描述:IGBT MOD TRENCH PHASE LEG SP6 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
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