參數(shù)資料
型號(hào)： APTGT35X120BTP3G
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： IGBT 晶體管
英文描述： 40 A, 1200 V, N-CHANNEL IGBT
封裝： MODULE-35
文件頁數(shù)： 3/4頁
文件大?。?/td> 269K
代理商： APTGT35X120BTP3G
APTGT35X120RTP3
APTGT35X120BTP3
A
PT
G
T
35
X
12
0B
T
P3
–
R
ev
1
D
ec
em
be
r,
20
03
APT website – http://www.advancedpower.com
3 - 4
IGBT & Diode Inverter Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 3mA
1200
V
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
4
mA
Tj = 25°C
1.8
2.2
VCE(on) Collector Emitter on Voltage
VGE =15V
IC = 50A
Tj = 125°C
2.1
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 2 mA
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
600
nA
Cies
Input Capacitance
2530
Coss
Output Capacitance
132
Crss
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
115
pF
Td(on)
Turn-on Delay Time
85
Tr
Rise Time
30
Td(off)
Turn-off Delay Time
420
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 40A
RG = 27
65
ns
Td(on)
Turn-on Delay Time
90
Tr
Rise Time
45
Td(off)
Turn-off Delay Time
520
Tf
Fall Time
90
ns
Eoff
Turn off Energy
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 40A
RG = 27
4.2
mJ
Tj = 25°C
2.1
VF
Forward Voltage
VGE = 0V
IF = 40A
Tj = 125°C
2.0
V
Tj = 25°C
2
Qrr
Reverse Recovery Charge
IF = 25A
VR = 600V
di/dt=990A/s
Tj = 125°C
5
C
IGBT
0.6
RthJC
Junction to Case
Diode
0.95
°C/W
Temperature sensor NTC
Symbol Characteristic
Min
Typ
Max Unit
R25
Resistance @ 25°C
5
k
B 25/50
T25 = 298.16 K
3375
K
=
T
B
R
T
1
exp
25
50
/
25
3. Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max Unit
VISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
125
°C
Torque Mounting torque
To Heatsink
M5
3.3
N.m
Wt
Package Weight
300
g
T: Thermistor temperature
RT: Thermistor value at T
相關(guān)PDF資料
PDF描述
APTGT400DA120 500 A, 1200 V, N-CHANNEL IGBT
APTGT400DA120 500 A, 1200 V, N-CHANNEL IGBT
APTGT400DU120 500 A, 1200 V, N-CHANNEL IGBT
APTGT400DU120 500 A, 1200 V, N-CHANNEL IGBT
APTGT400SK120 500 A, 1200 V, N-CHANNEL IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APTGT35X120BTPG 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APTGT35X120RTP3 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module
APTGT35X120RTPG 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APTGT35X120T3G 功能描述:IGBT MOD TRENCH 3PH BRIDGE SP3 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APTGT400A120 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Phase leg Fast Trench + Field Stop IGBT Power Module
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