參數(shù)資料
型號(hào)： APTGT35X120BTP3
廠商： Advanced Power Technology Ltd.
英文描述： Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module
中文描述： 輸入整流橋制動(dòng)三相橋溝道IGBT功率模塊
文件頁(yè)數(shù)： 3/4頁(yè)
文件大?。?/td> 216K
代理商： APTGT35X120BTP3
APTGT35X120RTP3
APTGT35X120BTP3
A
APT website – http://www.advancedpower.com
3 - 4
IGBT & Diode Inverter
Electrical Characteristics
Symbol Characteristic
BV
CES
Collector - Emitter Breakdown Voltage
I
CES
Zero Gate Voltage Collector Current
Test Conditions
V
GE
= 0V, I
C
= 3mA
V
GE
= 0V, V
CE
= 1200V
V
GE
=15V
I
C
= 50A
V
GE
= V
CE
, I
C
= 2 mA
V
GE
= 20V, V
CE
= 0V
V
GE
= 0V
V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 40A
R
G
= 27
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 40A
R
G
= 27
Min
1200
5.0
Typ
1.8
2.1
5.8
2530
132
115
85
30
420
65
90
45
520
90
4.2
2.1
2.0
2
Max
4
2.2
6.5
600
Unit
V
mA
T
j
= 25°C
T
j
= 125°C
V
CE(on)
Collector Emitter on Voltage
V
V
GE(th)
I
GES
C
ies
C
oss
C
rss
T
d(on)
T
r
T
d(off)
T
f
T
d(on)
T
r
T
d(off)
T
f
E
off
Gate Threshold Voltage
Gate – Emitter Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn off Energy
V
nA
pF
ns
ns
mJ
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
V
F
Forward Voltage
V
GE
= 0V
I
F
= 40A
I
F
= 25A
V
R
= 600V
di/dt=990A/μs
V
Q
rr
Reverse Recovery Charge
T
j
= 125°C
IGBT
Diode
5
μC
0.6
0.95
R
thJC
Junction to Case
°C/W
Temperature sensor NTC
Symbol Characteristic
R
25
Resistance @ 25°C
B
25/50
T
25
= 298.16 K
Min
Typ
5
3375
Max
Unit
k
K
=
T
T
B
R
R
T
1
1
exp
25
50
/
25
25
3.
Thermal and package characteristics
Symbol Characteristic
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
T
J
Operating junction temperature range
T
STG
Storage Temperature Range
T
C
Operating Case Temperature
Torque Mounting torque
Wt
Package Weight
Min
Typ
Max
Unit
V
ISOL
2500
V
-40
-40
-40
150
125
125
3.3
300
°C
To Heatsink
M5
N.m
g
T: Thermistor temperature
R
T
: Thermistor value at T
相關(guān)PDF資料
PDF描述
APTGT35X120RTP3 Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module
APTGT400U120D4 Single switch Trench IGBT Power Module
APTGT50A120D1 Phase leg Trench IGBT Power Module
APTGT75A120D1 Phase leg Trench IGBT Power Module
APTGT50A170D1 Phase leg Trench IGBT Power Module
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APTGT35X120BTPG 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APTGT35X120RTP3 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module
APTGT35X120RTPG 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APTGT35X120T3G 功能描述:IGBT MOD TRENCH 3PH BRIDGE SP3 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開(kāi)）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APTGT400A120 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Phase leg Fast Trench + Field Stop IGBT Power Module
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