- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36736 > APTGT35SK120D1G (MICROSEMI POWER PRODUCTS GROUP) 55 A, 1200 V, N-CHANNEL IGBT PDF資料下載
參數(shù)資料
| 型號： | APTGT35SK120D1G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 55 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-7 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 184K |
| 代理商： | APTGT35SK120D1G |
APTGT35SK120D1
A
PT
G
T
35
SK
12
0D
1
–
R
ev
0
Ja
nu
ar
y,
20
04
APT website – http://www.advancedpower.com
2 - 3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 1.5mA
1200
V
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
5
mA
Tj = 25°C
1.7
2.1
VCE(on) Collector Emitter on Voltage
VGE = 15V
IC = 35A
Tj = 125°C
2.0
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 1.5mA
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Cies
Input Capacitance
2.5
Cres
Reverse Transfer Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
0.1
nF
Td(on)
Turn-on Delay Time
150
Tr
Rise Time
90
Td(off)
Turn-off Delay Time
550
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 35A
RG = 27
130
ns
Td(on)
Turn-on Delay Time
180
Tr
Rise Time
100
Td(off)
Turn-off Delay Time
650
Tf
Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 35A
RG = 27
180
ns
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Tj = 25°C
1.6
2.1
VF
Diode Forward Voltage
IF = 35A
VGE = 0V
Tj = 125°C
1.6
V
Erec
Reverse Recovery Energy
IF = 35A
VR = 600V
di/dt =990A/s
Tj = 125°C
2.7
mJ
Tj = 25°C
3.7
Qrr
Reverse Recovery Charge
IF = 35A
VR = 600V
di/dt =990A/s Tj = 125°C
6.8
C
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max Unit
IGBT
0.6
RthJC
Junction to Case
Diode
0.95
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
125
°C
For terminals
M5
2
3.5
Torque Mounting torque
To Heatsink
M6
3
5
N.m
Wt
Package Weight
180
g
Package outline
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTGT35X120BTP3 | 40 A, 1200 V, N-CHANNEL IGBT |
| APTGT35X120RTP3 | 40 A, 1200 V, N-CHANNEL IGBT |
| APTGT35X120BTP3 | 40 A, 1200 V, N-CHANNEL IGBT |
| APTGT35X120RTP3G | 40 A, 1200 V, N-CHANNEL IGBT |
| APTGT35X120RTP3 | 40 A, 1200 V, N-CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGT35X120BTP3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module |
| APTGT35X120BTPG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT35X120RTP3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module |
| APTGT35X120RTPG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT35X120T3G | 功能描述:IGBT MOD TRENCH 3PH BRIDGE SP3 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。