參數(shù)資料
型號(hào)： APTGT35SK120D1
廠商： Advanced Power Technology Ltd.
英文描述： Buck chopper Trench IGBT Power Module
中文描述： 降壓斬波溝道IGBT功率模塊
文件頁(yè)數(shù)： 2/3頁(yè)
文件大?。?/td> 153K
代理商： APTGT35SK120D1
APTGT35SK120D1
A
APT website – http://www.advancedpower.com
2 - 3
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BV
CES
Collector - Emitter Breakdown Voltage
I
CES
Zero Gate Voltage Collector Current
Test Conditions
V
GE
= 0V, I
C
= 1.5mA
V
GE
= 0V, V
CE
= 1200V
V
GE
= 15V
I
C
= 35A
V
GE
= V
CE
, I
C
= 1.5mA
V
GE
= 20V, V
CE
= 0V
Min
1200
5.0
Typ
1.7
2.0
5.8
Max
5
2.1
6.5
400
Unit
V
mA
T
j
= 25°C
T
j
= 125°C
V
CE(on)
Collector Emitter on Voltage
V
V
GE(th)
I
GES
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
res
Reverse Transfer Capacitance
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
Reverse diode ratings and characteristics
Symbol Characteristic
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
Test Conditions
V
GE
= 0V, V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 35A
R
G
= 27
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 35A
R
G
= 27
Min
Typ
2.5
0.1
150
90
550
130
180
100
650
180
Max
Unit
nF
ns
ns
Test Conditions
I
F
= 35A
V
GE
= 0V
I
F
= 35A
V
R
= 600V
di/dt =990A/μs
I
F
= 35A
V
= 600V
di/dt =990A/μs T
j
= 125°C
Min
Typ
1.6
1.6
Max
2.1
Unit
T
j
= 25°C
T
j
= 125°C
V
F
Diode Forward Voltage
V
E
rec
Reverse Recovery Energy
T
j
= 125°C
2.7
mJ
T
j
= 25°C
3.7
Q
rr
Reverse Recovery Charge
6.8
μC
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
0.6
0.95
Unit
IGBT
Diode
R
thJC
Junction to Case
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
2500
V
T
J
T
STG
T
C
-40
-40
-40
2
3
150
125
125
3.5
5
180
°C
For terminals
To Heatsink
M5
M6
Torque Mounting torque
N.m
Wt
Package Weight
g
Package outline
相關(guān)PDF資料
PDF描述
APTGT35X120BTP3 Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module
APTGT35X120RTP3 Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module
APTGT400U120D4 Single switch Trench IGBT Power Module
APTGT50A120D1 Phase leg Trench IGBT Power Module
APTGT75A120D1 Phase leg Trench IGBT Power Module
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APTGT35SK120D1G 功能描述:IGBT 1200V 55A 205W D1 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類(lèi)型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開(kāi)）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類(lèi)型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APTGT35X120BTP3 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module
APTGT35X120BTPG 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APTGT35X120RTP3 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module
APTGT35X120RTPG 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*