參數(shù)資料
型號: APTGT300A60TG
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: IGBT 晶體管
英文描述: 430 A, 600 V, N-CHANNEL IGBT
封裝: ROHS COMPLIANT, SP4, 10 PIN
文件頁數(shù): 1/5頁
文件大?。?/td> 188K
代理商: APTGT300A60TG
APTGT300A60TG
APT
G
T
300A60T
G
Rev
1
Apr
il,
2009
www.microsemi.com
1- 5
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
VBUS
Q1
G1
E1
OUT
NTC2
0/VBUS
G2
E2
NTC1
Q2
OUT
NTC2
VBUS
E1
G2
E2
NTC1
0/VBUS
G2
E2
G1
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC = 25°C
430
IC
Continuous Collector Current
TC = 80°C
300
ICM
Pulsed Collector Current
TC = 25°C
450
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
935
W
RBSOA Reverse Bias Safe Operating Area
Tj = 150°C
600A @ 550V
VCES = 600V
IC = 300A @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Trench + Field Stop IGBT Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
High level of integration
Internal thermistor for temperature monitoring
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
Phase leg
Trench + Field Stop IGBT
Power Module
相關(guān)PDF資料
PDF描述
APTGT300A60 430 A, 600 V, N-CHANNEL IGBT
APTGT300A60 430 A, 600 V, N-CHANNEL IGBT
APTGT300DA120G 420 A, 1200 V, N-CHANNEL IGBT
APTGT300DA120 420 A, 1200 V, N-CHANNEL IGBT
APTGT300DA120 420 A, 1200 V, N-CHANNEL IGBT
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