參數(shù)資料
型號(hào): APTGT200DU120
廠商: Advanced Power Technology Ltd.
英文描述: Dual common source Fast Trench + Field Stop IGBT Power Module
中文描述: 雙共源快速戴場(chǎng)站IGBT功率模塊
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 277K
代理商: APTGT200DU120
APTGT200DU120
A
APT website – http://www.advancedpower.com
2 - 5
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V, V
CE
= 1200V
V
GE
=15V
I
C
= 200A
V
GE
= V
CE
, I
C
= 3 mA
V
GE
= 20V, V
CE
= 0V
350
2.1
6.5
500
μA
T
j
= 25°C
T
j
= 125°C
1.4
5.0
1.7
2.0
5.8
V
CE(sat)
Collector Emitter Saturation Voltage
V
V
GE(th)
I
GES
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
E
on
Turn on Energy
E
off
Turn off Energy
Reverse diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Peak Repetitive Reverse Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 200A
R
G
= 2.7
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 200A
R
G
= 2.7
Min
Typ
14
0.8
0.6
260
30
420
70
290
50
520
90
20
20
Max
Unit
nF
ns
ns
mJ
Test Conditions
Min
1200
Typ
200
1.6
1.6
170
280
18
36
Max
350
600
2.1
Unit
V
T
j
= 25°C
T
j
= 125°C
Tc = 80°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
I
RM
Maximum Reverse Leakage Current
V
R
=1200V
μA
I
F(AV)
Maximum Average Forward Current
50% duty cycle
I
F
= 200A
V
GE
= 0V
A
V
F
Diode Forward Voltage
V
t
rr
Reverse Recovery Time
ns
Q
rr
Reverse Recovery Charge
I
F
= 200A
V
R
= 600V
di/dt =2500A/μs
μC
相關(guān)PDF資料
PDF描述
APTGT200DU60T Dual common source Trench + Field Stop IGBT Power Module
APTGT200H120 Full - Bridge Fast Trench + Field Stop IGBT Power Module
APTGT200H60 Full - Bridge Trench + Field Stop IGBT Power Module
APTGT200SK120D3 Buck chopper Trench IGBT Power Module
APTGT200SK120 Buck chopper Fast Trench + Field Stop IGBT Power Module
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APTGT200DU120G 功能描述:POWER MOD IGBT TRENCH DL SRC SP6 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時(shí)的最大Vce(開(kāi)):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APTGT200DU60T 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Dual common source Trench + Field Stop IGBT Power Module
APTGT200DU60TG 功能描述:POWER MOD IGBT TRENCH DL SRC SP4 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時(shí)的最大Vce(開(kāi)):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APTGT200H120 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full - Bridge Fast Trench + Field Stop IGBT Power Module
APTGT200H120G 功能描述:IGBT MOD TRENCH FULL BRIDGE SP6 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時(shí)的最大Vce(開(kāi)):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B