參數(shù)資料
型號: APTGT200DH120
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: IGBT 晶體管
英文描述: 280 A, 1200 V, N-CHANNEL IGBT
封裝: MODULE-8
文件頁數(shù): 1/5頁
文件大?。?/td> 271K
代理商: APTGT200DH120
APTGT200DH120
A
P
T
G
T
200
D
H
120
R
ev
0
M
ay,
2005
APT website – http://www.advancedpower.com
1 - 5
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
VBUS
OUT2
CR3
0/VBUS
E4
Q4
G4
OUT1
CR2
Q1
G1
E1
G4
E4
VBUS
G1
E1
0/VBUS
OUT2
OUT1
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC= 25°C
280
IC
Continuous Collector Current
TC= 80°C
200
ICM
Pulsed Collector Current
TC= 25°C
400
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC= 25°C
890
W
RBSOA
Reverse Bias Safe Operating Area
Tj = 125°C
400A @ 1100V
VCES = 1200V
IC = 200A @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Switched Reluctance Motor Drives
Features
Fast Trench + Field Stop IGBT Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Asymmetrical - Bridge
Fast Trench + Field Stop IGBT
Power Module
相關PDF資料
PDF描述
APTGT200DH120 280 A, 1200 V, N-CHANNEL IGBT
APTGT200DH60 290 A, 600 V, N-CHANNEL IGBT
APTGT200DH60 290 A, 600 V, N-CHANNEL IGBT
APTGT200DU120 280 A, 1200 V, N-CHANNEL IGBT
APTGT200DU120 280 A, 1200 V, N-CHANNEL IGBT
相關代理商/技術參數(shù)
參數(shù)描述
APTGT200DH120G 功能描述:IGBT MOD TRENCH ASYM BRIDGE SP6 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應商設備封裝:SOT-227B
APTGT200DH60G 功能描述:IGBT MOD TRENCH ASYM BRIDGE SP6 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應商設備封裝:SOT-227B
APTGT200DU120 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Dual common source Fast Trench + Field Stop IGBT Power Module
APTGT200DU120G 功能描述:POWER MOD IGBT TRENCH DL SRC SP6 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應商設備封裝:SOT-227B
APTGT200DU60T 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Dual common source Trench + Field Stop IGBT Power Module