參數(shù)資料
型號(hào): APTGT150DA120TG
廠(chǎng)商: MICROSEMI POWER PRODUCTS GROUP
元件分類(lèi): IGBT 晶體管
英文描述: 220 A, 1200 V, N-CHANNEL IGBT
封裝: ROHS COMPLIANT, SP4, 12 PIN
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 256K
代理商: APTGT150DA120TG
APTGT150DA120TG
A
P
T
G
T
150
D
A
120
T
G
R
ev
1
J
ul
y,
2006
www.microsemi.com
1 - 5
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC= 25°C
220
IC
Continuous Collector Current
TC= 80°C
150
ICM
Pulsed Collector Current
TC= 25°C
350
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC= 25°C
690
W
RBSOA
Reverse Bias Safe Operating Area
Tj = 125°C
300A @ 1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
CR1
VBUS SENSE
NT C2
Q2
G2
NT C1
OUT
VBUS
E2
0/VBU S
VBUS
OUT
NTC2
NTC1
0/VBUS
E2
G2
VBUS
SENSE
VCES = 1200V
IC = 150A @ Tc = 80°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
Fast Trench + Field Stop IGBT Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
High level of integration
Internal thermistor for temperature monitoring
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
Boost chopper
Fast Trench + Field Stop IGBT
Power Module
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