參數(shù)資料
型號(hào)： APTGT100TDU120TPG
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： IGBT 晶體管
英文描述： 140 A, 1200 V, N-CHANNEL IGBT
封裝： ROHS COMPLIANT, SP6-P, 23 PIN
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 223K
代理商： APTGT100TDU120TPG
APTGT100TDU120TPG
APT
G
T
100T
DU120T
PG
–
Rev
0
M
ay,
2009
www.microsemi.com
1- 5
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
E5
G5
E6
G6
G2
E2
E4
G4
NT
C
1
NT
C
2
C4
C6
C2
E5/E6
E3/E4
E1/E2
C3
C1
E3
G1
G3
E1
C5
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC = 25°C
140
IC
Continuous Collector Current
TC = 80°C
100
ICM
Pulsed Collector Current
TC = 25°C
200
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
480
W
RBSOA Reverse Bias Safe Operating Area
Tj = 125°C
200A @ 1100V
VCES = 1200V
IC = 100A @ Tc = 80°C
Application
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Trench + Field Stop IGBT Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
High level of integration
Internal thermistor for temperature monitoring
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Very low (12mm) profile
Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
RoHS Compliant
Triple Dual Common Source
Fast Trench + Field Stop IGBT
Power Module
相關(guān)PDF資料
PDF描述
APTGT150A120D1G 220 A, 1200 V, N-CHANNEL IGBT
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APTGT150A60T 225 A, 600 V, N-CHANNEL IGBT
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APTGT150H60T 225 A, 600 V, N-CHANNEL IGBT
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