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參數(shù)資料
| 型號： | APTGT100SK60T3AG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 150 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 198K |
| 代理商： | APTGT100SK60T3AG |
APTGT100SK60T3AG
APT
G
T
100SK60T
3AG
–
Rev
0
M
ay,
2009
www.microsemi.com
2 – 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 600V
250
A
Tj = 25°C
1.5
1.9
VCE(sat)
Collector Emitter Saturation Voltage
VGE =15V
IC = 100A
Tj = 150°C
1.7
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 1.5 mA
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
6100
Coes
Output Capacitance
390
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
190
pF
QG
Gate charge
VGE= ±15V ; VCE=300V
IC=100A
1.1
C
Td(on)
Turn-on Delay Time
115
Tr
Rise Time
45
Td(off)
Turn-off Delay Time
225
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 100A
RG = 3.3Ω
55
ns
Td(on)
Turn-on Delay Time
130
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
300
Tf
Fall Time
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 100A
RG = 3.3Ω
70
ns
Tj = 25°C
0.4
Eon
Turn on Energy
Tj = 150°C
0.875
mJ
Tj = 25°C
2.5
Eoff
Turn off Energy
VGE = ±15V
VBus = 300V
IC = 100A
RG = 3.3Ω
Tj = 150°C
3.5
mJ
Isc
Short Circuit data
VGE ≤15V ; VBus = 360V
tp ≤ 6s ; Tj = 150°C
500
A
Chopper diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
150
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 150°C
400
A
IF
DC Forward Current
Tc = 100°C
100
A
Tj = 25°C
1.6
2
VF
Diode Forward Voltage
IF = 100A
VGE = 0V
Tj = 150°C
1.5
V
Tj = 25°C
100
trr
Reverse Recovery Time
Tj = 150°C
150
ns
Tj = 25°C
5.1
Qrr
Reverse Recovery Charge
Tj = 150°C
10.7
C
Tj = 25°C
1.2
Er
Reverse Recovery Energy
IF = 100A
VR = 300V
di/dt =2500A/s
Tj = 150°C
2.4
mJ
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| APTGT100SK60TG | 功能描述:IGBT 600V 150A 340W SP4 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGT100TA120TPG | 制造商:Microsemi Corporation 功能描述:Trans IGBT Module N-CH 1.2KV 140A 23-Pin Case SP6-P 制造商:Microsemi Corporation 功能描述:POWER MODULE - IGBT - Bulk |
| APTGT100TA60P | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Triple phase leg Trench + Field Stop IGBT Power Module |
| APTGT100TA60PG | 功能描述:IGBT MODULE TRPL PHASE LEG SP6P RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
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