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參數(shù)資料
| 型號： | APTGT100SK120T |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Buck chopper Fast Trench + Field Stop IGBT Power Module |
| 中文描述： | 降壓斬波器快速戴場站IGBT功率模塊 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 287K |
| 代理商： | APTGT100SK120T |
APTGT100SK120T
A
APT website – http://www.advancedpower.com
2 - 5
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V, V
CE
= 1200V
V
GE
=15V
I
C
= 100A
V
GE
= V
CE
, I
C
= 2 mA
V
GE
= 20V, V
CE
= 0V
250
2.1
6.5
400
μA
T
j
= 25°C
T
j
= 125°C
1.4
5.0
1.7
2.0
5.8
V
CE(sat)
Collector Emitter Saturation Voltage
V
V
GE(th)
I
GES
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
E
on
Turn on Energy
E
off
Turn off Energy
Chopper diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Peak Repetitive Reverse Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 100A
R
G
= 3.9
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 100A
R
G
= 3.9
Min
Typ
7200
400
300
260
30
420
70
290
50
520
90
10
10
Max
Unit
pF
ns
ns
mJ
Test Conditions
Min
1200
Typ
100
1.6
1.6
170
280
9
18
Max
250
500
2.1
Unit
V
T
j
= 25°C
T
j
= 125°C
Tc = 80°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
I
RM
Maximum Reverse Leakage Current
V
R
=1200V
μA
I
F(AV)
Maximum Average Forward Current
50% duty cycle
I
F
= 100A
V
GE
= 0V
A
V
F
Diode Forward Voltage
V
t
rr
Reverse Recovery Time
ns
Q
rr
Reverse Recovery Charge
I
F
= 100A
V
R
= 600V
di/dt =2000A/μs
μC
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGT100SK120TG | 功能描述:IGBT 1200V 140A 480W SP4 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGT100SK170D1 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Buck chopper Trench IGBT Power Module |
| APTGT100SK170D1G | 功能描述:IGBT 1700V 200A 695W D1 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGT100SK170DG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT100SK170T | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Buck chopper Trench + Field Stop IGBT Power Module |
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