參數(shù)資料
型號: APTGT100DH170
元件分類: IGBT 晶體管
英文描述: 150 A, 1700 V, N-CHANNEL IGBT
封裝: MODULE-8
文件頁數(shù): 1/5頁
文件大?。?/td> 272K
代理商: APTGT100DH170
APTGT100DH170
A
P
T
G
T
100
D
H
170
R
ev
0
M
ay,
2005
APT website – http://www.advancedpower.com
1 - 5
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1700
V
TC= 25°C
150
IC
Continuous Collector Current
TC= 80°C
100
ICM
Pulsed Collector Current
TC= 25°C
200
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC= 25°C
560
W
RBSOA
Reverse Bias Safe Operating Area
Tj = 125°C
200A @ 1600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
VBUS
OUT2
CR3
0/VBUS
E4
Q4
G4
OUT1
CR2
Q1
G1
E1
G4
E4
VBUS
G1
E1
0/VBUS
OUT2
OUT1
VCES = 1700V
IC = 100A @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Switched Reluctance Motor Drives
Features
Trench + Field Stop IGBT Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Asymmetrical - Bridge
Trench + Field Stop IGBT
Power Module
相關(guān)PDF資料
PDF描述
APTGT100DH170 150 A, 1700 V, N-CHANNEL IGBT
APTGT100DSK60T3 75 A, 600 V, N-CHANNEL IGBT
APTGT100DSK60T3 75 A, 600 V, N-CHANNEL IGBT
APTGT100DU120T 140 A, 1200 V, N-CHANNEL IGBT
APTGT100DU120T 140 A, 1200 V, N-CHANNEL IGBT
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