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參數(shù)資料
| 型號(hào)： | APTGS10X120BTP2 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| 中文描述： | 輸入整流橋橋制動(dòng)三相IGBT功率模塊不擴(kuò)散核武器條約 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 189K |
| 代理商： | APTGS10X120BTP2 |
APTGS10X120RTP2
APTGS10X120BTP2
A
APT website – http://www.advancedpower.com
3 - 4
IGBT & Diode Inverter
Electrical Characteristics
Symbol Characteristic
BV
CES
Collector - Emitter Breakdown Voltage
Test Conditions
V
GE
= 0V, I
C
= 500μA
V
GE
= 0V
V
CE
= 1200V
V
GE
=15V
I
C
= 10A
V
GE
= V
CE
, I
C
= 0.35 mA
V
GE
= 20V, V
CE
= 0V
V
GE
= 0V, V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 10A
R
G
= 82
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 10A
R
G
= 82
Min
1200
4.5
Typ
0.5
0.8
2.4
2.75
5.5
Max
500
2.85
6.5
300
Unit
V
μA
mA
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
I
CES
Zero Gate Voltage Collector Current
V
CE(on)
Collector Emitter on Voltage
V
V
GE(th)
I
GES
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
C
ies
Input Capacitance
600
pF
T
d(on)
T
r
T
d(off)
T
f
T
d(on)
T
r
T
d(off)
T
f
E
off
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn off Energy
40
45
255
40
45
40
285
60
1.1
2.2
2.1
0.84
ns
ns
mJ
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
2.55
V
F
Forward Voltage
V
GE
= 0V
I
F
= 10A
I
F
= 10A
V
R
= 600V
di/dt=400A/μs
V
Q
rr
Reverse Recovery Charge
T
j
= 125°C
1.5
μC
IGBT
Diode
1.2
2.3
R
thJC
Junction to Case
°C/W
Temperature sensor NTC
Symbol Characteristic
R
25
Resistance @ 25°C
B
25/50
T
25
= 298.16 K
Min
Typ
5
3375
Max
Unit
k
K
=
T
T
B
R
R
T
1
1
exp
25
50
/
25
25
3.
Thermal and package characteristics
Symbol Characteristic
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
T
J
Operating junction temperature range
T
STG
Storage Temperature Range
T
C
Operating Case Temperature
Torque Mounting torque
Wt
Package Weight
Min
Typ
Max
Unit
V
ISOL
2500
V
-40
-40
-40
150
125
125
3.3
185
°C
To Heatsink
M5
N.m
g
T: Thermistor temperature
R
T
: Thermistor value at T
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTGS10X120RTP2 | Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGS15X120BTP2 | Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGS15X120RTP2 | Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGS25X120BTP2 | Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGS25X120RTP2 | Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGS10X120BTPG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGS10X120RTP2 | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGS10X120RTPG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGS15X120BTP2 | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGS15X120BTPG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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