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參數(shù)資料
| 型號： | APTGF90X60TE3 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | 3 Phase bridge NPT IGBT Power Module |
| 中文描述： | 3相橋不擴散核武器條約IGBT功率模塊 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 189K |
| 代理商： | APTGF90X60TE3 |
APTGF90X60TE3
APT website – http://www.advancedpower.com
2 - 3
Electrical Characteristics
Symbol Characteristic
BV
CES
Collector - Emitter Breakdown Voltage
All ratings @ T
j
= 25°C unless otherwise specified
Test Conditions
V
GE
= 0V, I
C
= 500μA
T
j
= 25°C
Zero Gate Voltage Collector Current
V
CE
= 600V
V
GE
=15V
I
C
= 100A
Gate Threshold Voltage
V
GE
= V
CE
, I
C
= 1.5mA
Gate – Emitter Leakage Current
V
GE
= 20V, V
CE
= 0V
Min
600
1.7
4.5
Typ
1
1
2.2
Max
500
2.45
6.5
400
Unit
V
μA
mA
I
CES
V
GE
= 0V
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
V
CE(on)
Collector Emitter on Voltage
V
V
GE(th)
I
GES
V
nA
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
res
Reverse Transfer Capacitance
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
E
off
Turn off Energy
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
V
GE
= 0V, V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 100A
R
G
= 2.2
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 100A
R
G
= 2.2
Min
Typ
4300
400
25
10
130
20
25
11
150
30
2.9
Max
Unit
pF
ns
ns
mJ
Test Conditions
I
F
= 100A
V
GE
= 0V
I
F
= 100A
V
R
= 300V
di/dt =800A/μs
I
F
= 100A
V
= 300V
di/dt =800A/μs T
j
= 125°C
Min
Typ
1.25
1.2
Max
1.6
Unit
T
j
= 25°C
T
j
= 125°C
V
F
Diode Forward Voltage
V
E
r
Reverse Recovery Energy
T
j
= 125°C
3.2
mJ
T
j
= 25°C
7
Q
rr
Reverse Recovery Charge
12
μC
Temperature sensor NTC
Symbol Characteristic
R
25
Resistance @ 25°C
B
25/50
T
25
= 298.16 K
Min
Typ
5
3375
Max
Unit
k
K
=
T
T
B
R
R
T
1
1
exp
25
50
/
25
25
T: Thermistor temperature
R
T
: Thermistor value at T
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APTGF90X60TE3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGFQ25H120T2G | 功能描述:IGBT 1200V 40A 227W MODULE RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APTGL100TL170G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - IGBT - Bulk |
| APTGL120DA120T1G | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Boost chopper Trench + Field Stop IGBT4 Power module |
| APTGL120SK120T1G | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Buck chopper Trench + Field Stop IGBT4 Power module |
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