參數(shù)資料
型號(hào): APTGF90SK60TG
廠商: Advanced Power Technology Ltd.
英文描述: Buck chopper NPT IGBT Power Module
中文描述: 降壓斬波器不擴(kuò)散核武器條約IGBT功率模塊
文件頁(yè)數(shù): 2/6頁(yè)
文件大小: 318K
代理商: APTGF90SK60TG
APTGF90SK60TG
A
APT website – http://www.advancedpower.com
2 - 6
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
V
GE
= 0V
V
CE
= 600V
V
GE
=15V
I
C
= 90A
V
GE
= V
CE
, I
C
= 1mA
V
GE
= 20 V, V
CE
= 0V
Min
3
Typ
2.0
2.2
Max
100
1000
2.5
5
±150
Unit
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
I
CES
Zero Gate Voltage Collector Current
μA
V
CE(sat)
Collector Emitter Saturation Voltage
V
V
GE(th)
I
GES
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Q
g
Total gate Charge
Q
ge
Gate – Emitter Charge
Q
gc
Gate – Collector Charge
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
E
on
Turn-on Switching Energy
E
off
Turn-off Switching Energy
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
E
on
Turn-on Switching Energy
E
off
Turn-off Switching Energy
Chopper diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Peak Repetitive Reverse Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
Min
Typ
4300
470
400
330
290
200
26
25
150
30
3.35
2.85
26
25
170
40
4.3
3.5
Max
Unit
pF
V
GS
= 15V
V
Bus
= 300V
I
C
= 90A
nC
ns
Inductive Switching (25°C)
V
GE
= 15V
V
Bus
= 400V
I
C
= 90A
R
G
= 5
mJ
ns
Inductive Switching (125°C)
V
GE
= 15V
V
Bus
= 400V
I
C
= 90A
R
G
= 5
mJ
Test Conditions
Min
600
Typ
100
1.6
2
1.3
Max
100
500
2
Unit
V
T
j
= 25°C
T
j
= 125°C
T
c
= 80°C
I
RM
Maximum Reverse Leakage Current
V
R
=600V
μA
I
F
DC Forward current
I
F
= 100A
I
F
= 200A
I
F
= 100A
A
V
F
Diode Forward Voltage
T
j
= 125°C
V
T
j
= 25°C
160
t
rr
Reverse Recovery Time
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
220
ns
290
1530
Q
rr
Reverse Recovery Charge
I
F
= 100A
V
R
= 400V
di/dt =200A/μs
nC
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