參數(shù)資料
型號(hào): APTGF75H120TG
廠商: Advanced Power Technology Ltd.
英文描述: Full - Bridge NPT IGBT Power Module
中文描述: 全-橋不擴(kuò)散核武器條約IGBT功率模塊
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 291K
代理商: APTGF75H120TG
APTGF75H120TG
A
APT website – http://www.advancedpower.com
2 - 5
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
V
GE
= 0V
V
CE
= 1200V
Min
4.5
Typ
250
500
3.2
3.9
Max
3.7
6.5
±500
Unit
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
I
CES
Zero Gate Voltage Collector Current
μA
V
CE(sat)
Collector Emitter saturation Voltage
V
GE
=15V
I
C
= 75A
V
GE
= V
CE
, I
C
= 2.5 mA
V
GE
= ±20V, V
CE
= 0V
V
V
GE(th)
I
GES
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 75A
R
G
= 7.5
Inductive Switching (125°C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 75A
R
G
= 7.5
V
GE
= ±15V
V
Bus
= 600V
I
C
= 75A
R
G
= 7.5
Min
Typ
5.1
0.7
0.4
120
50
310
20
130
60
360
30
Max
Unit
nF
ns
ns
E
on
Turn-on Switching Energy
T
j
= 125°C
9
E
off
Turn-off Switching Energy
T
j
= 125°C
4
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Peak Repetitive Reverse Voltage
Test Conditions
Min
1200
Typ
50
2.1
1.9
Max
350
600
Unit
V
T
j
= 25°C
T
j
= 125°C
Tc = 80°C
T
j
= 25°C
T
j
= 125°C
I
RM
Maximum Reverse Leakage Current
V
R
=1200V
μA
I
F
DC Forward Current
A
V
F
Diode Forward Voltage
I
F
= 50A
V
E
r
Reverse Recovery Energy
T
j
= 125°C
T
j
= 25°C
3
95
mJ
t
rr
Reverse Recovery Time
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
190
4.2
9
ns
Q
rr
Reverse Recovery Charge
I
F
= 50A
V
R
= 600V
di/dt =1500A/μs
μC
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