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參數(shù)資料
| 型號： | APTGF75DH120T |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Asymmetrical - Bridge NPT IGBT Power Module |
| 中文描述： | 非對稱-橋不擴散核武器條約IGBT功率模塊 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 286K |
| 代理商： | APTGF75DH120T |
APTGF75DH120T
A
APT website – http://www.advancedpower.com
2 - 5
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
V
GE
= 0V
V
CE
= 1200V
Min
4.5
Typ
0.1
4
3.2
3.9
Max
2
3.7
6.5
±500
Unit
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
I
CES
Zero Gate Voltage Collector Current
mA
V
CE(on)
Collector Emitter on Voltage
V
GE
=15V
I
C
= 75A
V
GE
= V
CE
, I
C
= 2.5 mA
V
GE
= ±20V, V
CE
= 0V
V
V
GE(th)
I
GES
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
E
on
Turn-on Switching Energy
E
off
Turn-off Switching Energy
Reverse diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Peak Repetitive Reverse Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 75A
R
G
= 7.5
Inductive Switching (125°C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 75A
R
G
= 7.5
Min
Typ
5.1
0.7
0.4
120
50
310
20
130
60
360
30
9
4
Max
Unit
nF
ns
ns
mJ
Test Conditions
Min
1200
Typ
100
2.0
2.3
1.8
Max
250
500
2.5
Unit
V
T
j
= 25°C
T
j
= 125°C
Tc = 70°C
I
RM
Maximum Reverse Leakage Current
V
R
=1200V
μA
I
F(AV)
Maximum Average Forward Current
50% duty cycle
I
F
= 100A
I
F
= 200A
I
F
= 100A
I
F
= 100A
V
R
= 800V
di/dt =200A/μs
I
F
= 100A
V
= 800V
di/dt =200A/μs T
j
= 125°C
A
V
F
Diode Forward Voltage
T
j
= 125°C
V
T
j
= 25°C
420
t
rr
Reverse Recovery Time
T
j
= 125°C
580
ns
T
j
= 25°C
1.2
Q
rr
Reverse Recovery Charge
5.3
μC
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGF75DH120T3G | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Asymmetrical - Bridge NPT IGBT Power Module |
| APTGF75DH120TG | 功能描述:IGBT MODULE NPT ASYM BRIDGE SP4 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGF75DSK120T | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Dual Buck chopper NPT IGBT Power Module |
| APTGF75DSK120TG | 功能描述:IGBT MODULE NPT BUCK CHOP SP4 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGF75H120T3AG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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