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參數(shù)資料
| 型號： | APTGF75DA60D1 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 100 A, 600 V, N-CHANNEL IGBT |
| 封裝： | MODULE-7 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 169K |
| 代理商： | APTGF75DA60D1 |
APTGF75DA60D1
A
PT
G
F7
5D
A
60
D
1
–
R
ev
0
Ju
ly
,2
00
3
APT website – http://www.advancedpower.com
2 - 3
Electrical Characteristics
All ratings @ Tj = 25°C unless otherwise specified
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 500A
600
V
Tj = 25°C
1
500
A
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 600V
Tj = 125°C
1
mA
Tj = 25°C
1.95
2.45
VCE(on) Collector Emitter on Voltage
VGE = 15V
IC = 75A
Tj = 125°C
2.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 1.5 mA
4.5
5.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Cies
Input Capacitance
3300
Cres
Reverse Transfer Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
300
pF
Td(on)
Turn-on Delay Time
65
Tr
Rise Time
20
Td(off)
Turn-off Delay Time
155
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 75A
RG = 3
20
ns
Td(on)
Turn-on Delay Time
65
Tr
Rise Time
25
Td(off)
Turn-off Delay Time
170
Tf
Fall Time
35
ns
Eoff
Turn off Energy
Inductive Switching (125°C)
VGE = ±15V
VBus = 300V
IC = 75A
RG = 3
2.4
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Tj = 25°C
1.25
1.6
VF
Diode Forward Voltage
IF = 75A
VGE = 0V
Tj = 125°C
1.2
V
ER
Reverse Recovery Energy
IF = 75A
VR = 300V
di/dt =800A/s
Tj = 125°C
2.3
mJ
Tj = 25°C
5
Qrr
Reverse Recovery Charge
IF = 75A
VR = 300V
di/dt =800A/s Tj = 125°C
8
C
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max Unit
IGBT
0.35
RthJC
Junction to Case
Diode
0.66
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
125
°C
For terminals
M5
2
3.5
Torque Mounting torque
To Heatsink
M6
3
5
N.m
Wt
Package Weight
180
g
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APTGF75DA60D1G | 功能描述:IGBT 600V 100A 355W D1 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APTGF75DDA120T | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Dual Boost Chopper NPT IGBT Power Module |
| APTGF75DDA120TG | 功能描述:IGBT MODULE NPT BOOST CHOP SP4 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APTGF75DH120T | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Asymmetrical - Bridge NPT IGBT Power Module |
| APTGF75DH120T3G | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Asymmetrical - Bridge NPT IGBT Power Module |
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