參數資料
型號: APTGF660U60D4G
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: IGBT 晶體管
英文描述: 825 A, 600 V, N-CHANNEL IGBT
封裝: MODUL-4
文件頁數: 1/5頁
文件大?。?/td> 198K
代理商: APTGF660U60D4G
APTGF660U60D4G
APT
G
F660U60D4G
Rev
2
July,
2008
www.microsemi.com
1- 5
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC = 25°C
860
IC
Continuous Collector Current
TC = 80°C
660
ICM
Pulsed Collector Current
TC = 25°C
1320
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
2800
W
RBSOA Reverse Bias Safe Operating Area
Tj = 125°C
1600A@520V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
3
5
2
1
VCES = 600V
IC = 660A @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Non Punch Through (NPT) IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 50 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
M6 connectors for power
M4 connectors for signal
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
Single switch
NPT IGBT Power Module
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