參數(shù)資料
型號: APTGF50X60RTP3
廠商: Advanced Power Technology Ltd.
英文描述: Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module
中文描述: 輸入整流橋橋制動三相IGBT功率模塊不擴散核武器條約
文件頁數(shù): 1/4頁
文件大?。?/td> 201K
代理商: APTGF50X60RTP3
APTGF50X60RTP3
APTGF50X60BTP3
A
APT website – http://www.advancedpower.com
1 - 4
Application
Features
All ratings @ T
j
= 25°C unless otherwise specified
1.
Absolute maximum ratings
Diode rectifier
Absolute maximum ratings
Symbol
V
RRM
Repetitive Peak Reverse Voltage
I
D
DC Forward Current
Parameter
Max ratings
1600
80
500
400
Unit
V
T
C
= 80°C
T
j
= 25°C
T
j
= 150°C
I
FSM
Surge Forward Current
t
p
= 10ms
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APTGF50X60RTP3: Without Brake (Pin 7 & 14 not connected)
17
18
19
20
21
9
8
7
4
5
6
22
23
24
1
2
3
10
11
12
14 13
16 15
V
CES
= 600V
I
C
= 50A @ Tc = 80°C
AC Motor control
Non Punch Through (NPT) Fast IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 50 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Benefits
Low conduction losses
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Input rectifier bridge +
Brake + 3 Phase Bridge
NPT IGBT Power Module
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APTGF50X60RTP3G 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APTGF50X60T3G 功能描述:IGBT MODULE NPT 3PH BRIDGE SP3 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應商設備封裝:SOT-227B
APTGF530U120D4G 功能描述:IGBT 1200V 700A 3900W D4 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應商設備封裝:SOT-227B
APTGF660U60D4 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Single switch NPT IGBT Power Module
APTGF660U60D4G 功能描述:IGBT 600V 860A 2800W D4 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應商設備封裝:SOT-227B