參數(shù)資料
型號: APTGF50H120T
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: IGBT 晶體管
英文描述: 75 A, 1200 V, N-CHANNEL IGBT
封裝: MODULE-14
文件頁數(shù): 1/6頁
文件大小: 297K
代理商: APTGF50H120T
APTGF50H120T
A
PT
G
F50H
120T
R
ev
1
M
ar
ch,
2004
APT website – http://www.advancedpower.com
1- 6
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Non Punch Through (NPT) FAST IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 50 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Easy paralleling due to positive TC of VCEsat
Low profile
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
VBUS
OUT1
OUT2
Q3
Q4
E3
G3
0/VBUS
E4
G4
NTC2
G2
E2
NTC1
Q2
Q1
G1
E1
OUT1
OUT2
NTC1
NTC2
G3
E3
VBUS
G1
E1
G4
G2
E2
0/VBUS
E4
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
Tc = 25°C
75
IC
Continuous Collector Current
Tc = 80°C
50
ICM
Pulsed Collector Current
Tc = 25°C
150
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
Tc = 25°C
312
W
RBSOA Reverse Bias Safe Operating Area
Tj = 150°C
150A @ 1200V
VCES = 1200V
IC = 50A @ Tc = 80°C
Full - Bridge
NPT IGBT Power Module
相關PDF資料
PDF描述
APTGF50TDU120P 75 A, 1200 V, N-CHANNEL IGBT
APTGF50TDU120P 75 A, 1200 V, N-CHANNEL IGBT
APTGF50X120P2 72 A, 1200 V, N-CHANNEL IGBT
APTGF50X120E2 72 A, 1200 V, N-CHANNEL IGBT
APTGF50X120E2 72 A, 1200 V, N-CHANNEL IGBT
相關代理商/技術參數(shù)
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