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參數(shù)資料
| 型號： | APTGF30X60P2 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | 3 Phase bridge NPT IGBT Power Module |
| 中文描述： | 3相橋不擴散核武器條約IGBT功率模塊 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 185K |
| 代理商： | APTGF30X60P2 |
APTGF30X60E2
APTGF30X60P2
A
APT website – http://www.advancedpower.com
2 - 4
Electrical Characteristics
Symbol Characteristic
BV
CES
Collector - Emitter Breakdown Voltage
Test Conditions
V
GE
= 0V, I
C
= 500μA
V
GE
= 0V
V
CE
= 600V
V
GE
= 15V
I
C
= 30A
V
GE
= V
CE
, I
C
= 0.7 mA
V
GE
= 20V, V
CE
= 0V
Min
600
3
Typ
1
1
1.95
2.2
Max
500
2.45
6.5
400
Unit
V
μA
mA
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
I
CES
Zero Gate Voltage Collector Current
V
CE(on)
Collector Emitter on Voltage
V
V
GE(th)
I
GES
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
res
Reverse Transfer Capacitance
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
E
off
Turn off Energy
Reverse diode ratings and characteristics
Symbol Characteristic
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
Test Conditions
V
GE
= 0V, V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 30A
R
G
= 6.8
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 30A
R
G
= 6.8
Min
Typ
1300
100
30
6.5
75
12
32
7
85
18
0.8
Max
Unit
pF
ns
ns
mJ
Test Conditions
I
F
= 30A
V
GE
= 0V
I
F
= 30A
V
R
= 300V
di/dt =800A/μs
I
F
= 30A
V
= 300V
di/dt =800A/μs T
j
= 125°C
Min
Typ
1.25
1.2
Max
1.6
Unit
T
j
= 25°C
T
j
= 125°C
V
F
Diode Forward Voltage
V
E
R
Reverse Recovery Energy
T
j
= 125°C
0.9
mJ
T
j
= 25°C
2.1
Q
rr
Reverse Recovery Charge
3.3
μC
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
0.9
1.4
Unit
IGBT
Diode
R
thJC
Junction to Case
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque Mounting torque
Wt
Package Weight
2500
V
T
J
T
STG
T
C
-40
-40
-40
2
150
125
125
3.5
185
°C
To Heatsink
M5
N.m
g
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGF30X60P2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF30X60RTP2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF30X60T3G | 功能描述:IGBT MODULE NPT 2PH BRIDGE SP3 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGF330A60D3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Phase leg NPT IGBT Power Module |
| APTGF330A60D3G | 功能描述:IGBT NPT PHASE 600V 520A D3 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
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