參數資料
型號: APTGF300U60D4
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: IGBT 晶體管
英文描述: 375 A, 600 V, N-CHANNEL IGBT
封裝: MODULE-4
文件頁數: 1/3頁
文件大小: 199K
代理商: APTGF300U60D4
APTGF300U60D4
A
P
T
G
F
300
U
60D
4–
R
ev
0
J
anua
ry,
2005
APT website – http://www.advancedpower.com
1 - 3
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC= 25°C
375
IC
Continuous Collector Current
TC= 80°C
300
ICM
Pulsed Collector Current
TC= 25°C
600
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC= 25°C
1130
W
RBSOA
Reverse Bias Safe Operation Area
Tj = 125°C
600A@520V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
3
5
2
1
5
3
4
1
2
VCES = 600V
IC = 300A @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Non Punch Through (NPT) fast IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 50 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Low stray inductance
-
M6 connectors for power
-
M4 connectors for signal
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Single switch
NPT IGBT Power Module
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相關代理商/技術參數
參數描述
APTGF300U60D4G 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
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