參數(shù)資料
型號(hào): APTGF180DH60
元件分類: IGBT 晶體管
英文描述: 220 A, 600 V, N-CHANNEL IGBT
封裝: MODULE-8
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 293K
代理商: APTGF180DH60
APTGF180DH60
A
PT
G
F1
80D
H
60
R
ev
1
M
ar
ch,
2004
APT website – http://www.advancedpower.com
1- 6
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
Tc = 25°C
220
IC
Continuous Collector Current
Tc = 80°C
180
ICM
Pulsed Collector Current
Tc = 25°C
630
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
Tc = 25°C
833
W
RBSOA Reverse Bias Safe Operating Area
Tj = 150°C
630A @ 600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
G4
E4
VBUS
G1
E1
0/VBUS
OUT2
OUT1
VCES = 600V
IC = 180A @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Switched Reluctance Motor Drives
Features
Non Punch Through (NPT) THUNDERBOLT IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 100 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Asymmetrical - bridge
NPT IGBT Power Module
相關(guān)PDF資料
PDF描述
APTGF180DU60T 220 A, 600 V, N-CHANNEL IGBT
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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